MG100UZ12MRGJ PDF and Equivalents Search

 

MG100UZ12MRGJ Specs and Replacement

Type Designator: MG100UZ12MRGJ

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 690 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 94 nS

Coesⓘ - Output Capacitance, typ: 780 pF

Package: SOT227

 MG100UZ12MRGJ Substitution

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MG100UZ12MRGJ datasheet

 ..1. Size:370K  cn yangzhou yangjie elec
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MG100UZ12MRGJ

MG100UZ12MRGJ RoHS COMPLIANT IGBT Modules VRRM 1200V IFAV 100 A Applications Invertor Uninterruptible Power Supply (UPS) Convertor Welder SMPS Convertor Circuit Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness Fully isolated package High Short Circuit Capability Popular SOT-227 Packag... See More ⇒

 9.1. Size:114K  toshiba
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MG100UZ12MRGJ

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MG100UZ12MRGJ

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MG100UZ12MRGJ

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Specs: KWGFP25R12NS3, KWMFP40R12NS3, KWRFF100R12SWM, KWRFF40R12SWM, KWRFF50R12SWM, KWRFF75R12SWM, MG100HF12MIC1, MG100HF12MRC1, BT60T60ANFK, MG150HF12MIC2, MG150HF12MRC2, MG200HF12MIC2, MG200HF12MRC2, MG400HF12MIC2, MG400HF12MRC2, MG75HF12MIC1, MG75HF12MRC1

Keywords - MG100UZ12MRGJ transistor spec

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