All IGBT. MSG120T65HLC1 Datasheet

 

MSG120T65HLC1 Datasheet and Replacement


   Type Designator: MSG120T65HLC1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 882 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 240 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 134 nS
   Coesⓘ - Output Capacitance, typ: 495 pF
   Qg ⓘ - Total Gate Charge, typ: 181 nC
   Package: TO247PLUS
 

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MSG120T65HLC1 Datasheet (PDF)

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MSG120T65HLC1

MSG120T65HLC1Features Very Low Saturation Voltage:VCE(sat) = 1.8V @ IC = 120 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-Efficient Tight Parameter Distribution High Input ImpedanceApplications Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Other Power-Train ApplicationsRequiring High Power Switch

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: YGP15N65T2

Keywords - MSG120T65HLC1 transistor datasheet

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