All IGBT. MSG120T65HLC1 Datasheet

 

MSG120T65HLC1 Datasheet and Replacement


   Type Designator: MSG120T65HLC1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 882 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 240 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 134 nS
   Coesⓘ - Output Capacitance, typ: 495 pF
   Package: TO247PLUS
      - IGBT Cross-Reference

 

MSG120T65HLC1 Datasheet (PDF)

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MSG120T65HLC1

MSG120T65HLC1Features Very Low Saturation Voltage:VCE(sat) = 1.8V @ IC = 120 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-Efficient Tight Parameter Distribution High Input ImpedanceApplications Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Other Power-Train ApplicationsRequiring High Power Switch

Datasheet: MG200HF12MRC2 , MG400HF12MIC2 , MG400HF12MRC2 , MG75HF12MIC1 , MG75HF12MRC1 , MG75U12MRGJ , MSG100T65HLB3 , MSG100T65HLC1 , IKW40N65WR5 , MSG15T120FPC , MSG15T120FPE , MSG15T65FL , MSG15T65FLT , MSG15T65FLE , MSG160T65HLC1 , MSG20T65FQS , MSG20T65FQT .

History: IXXH100N60B3

Keywords - MSG120T65HLC1 transistor datasheet

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