All IGBT. MSG160T65HLC1 Datasheet

 

MSG160T65HLC1 Datasheet and Replacement


   Type Designator: MSG160T65HLC1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 882 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 240 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1(max) V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 197 nS
   Coesⓘ - Output Capacitance, typ: 644 pF
   Package: TO247PLUS
 

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MSG160T65HLC1 Datasheet (PDF)

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MSG160T65HLC1

MSG160T65HLC1Features Very Low Saturation Voltage:VCE(sat) = 2.1V @ IC = 160 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-Efficient Tight Parameter Distribution High Input ImpedanceApplications Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Other Power-Train ApplicationsRequiring High Power Switch

Datasheet: MSG100T65HLB3 , MSG100T65HLC1 , MSG120T65HLC1 , MSG15T120FPC , MSG15T120FPE , MSG15T65FL , MSG15T65FLT , MSG15T65FLE , GT30J124 , MSG20T65FQS , MSG20T65FQT , MSG20T65FQC , MSG30T65FT , MSG30T65FS , MSG30T65FC , MSG40T65FL , MSG50T120FQW .

History: SKM800GA176D | IKY40N120CH3 | CRG15T60A03L | JNG50N120LS | IXXX160N65C4 | APT44GA60SD30 | AOK40B65H2AL

Keywords - MSG160T65HLC1 transistor datasheet

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