All IGBT. MSG160T65HLC1 Datasheet

 

MSG160T65HLC1 IGBT. Datasheet pdf. Equivalent


   Type Designator: MSG160T65HLC1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 882 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 240 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 197 nS
   Coesⓘ - Output Capacitance, typ: 644 pF
   Qgⓘ - Total Gate Charge, typ: 235 nC
   Package: TO247PLUS

 MSG160T65HLC1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MSG160T65HLC1 Datasheet (PDF)

 ..1. Size:6685K  cn maspower
 msg160t65hlc1.pdf

MSG160T65HLC1 MSG160T65HLC1

MSG160T65HLC1Features Very Low Saturation Voltage:VCE(sat) = 2.1V @ IC = 160 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-Efficient Tight Parameter Distribution High Input ImpedanceApplications Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Other Power-Train ApplicationsRequiring High Power Switch

Datasheet: MSG100T65HLB3 , MSG100T65HLC1 , MSG120T65HLC1 , MSG15T120FPC , MSG15T120FPE , MSG15T65FL , MSG15T65FLT , MSG15T65FLE , FGH40N60UFD , MSG20T65FQS , MSG20T65FQT , MSG20T65FQC , MSG30T65FT , MSG30T65FS , MSG30T65FC , MSG40T65FL , MSG50T120FQW .

 

 
Back to Top