MSG160T65HLC1 PDF and Equivalents Search

 

MSG160T65HLC1 Specs and Replacement

Type Designator: MSG160T65HLC1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 882 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 240 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1(max) V @25℃

tr ⓘ - Rise Time, typ: 197 nS

Coesⓘ - Output Capacitance, typ: 644 pF

Package: TO247PLUS

 MSG160T65HLC1 Substitution

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MSG160T65HLC1 datasheet

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 msg160t65hlc1.pdf pdf_icon

MSG160T65HLC1

MSG160T65HLC1 Features Very Low Saturation Voltage VCE(sat) = 2.1V @ IC = 160 A Maximum Junction Temperature TJ = 175 C Positive Temperature Co-Efficient Tight Parameter Distribution High Input Impedance Applications Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Other Power-Train Applications Requiring High Power Switch ... See More ⇒

Specs: MSG100T65HLB3 , MSG100T65HLC1 , MSG120T65HLC1 , MSG15T120FPC , MSG15T120FPE , MSG15T65FL , MSG15T65FLT , MSG15T65FLE , MBQ60T65PES , MSG20T65FQS , MSG20T65FQT , MSG20T65FQC , MSG30T65FT , MSG30T65FS , MSG30T65FC , MSG40T65FL , MSG50T120FQW .

History: MSG100T100FLN

Keywords - MSG160T65HLC1 transistor spec

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