All IGBT. MSG160T65HLC1 Datasheet

 

MSG160T65HLC1 Datasheet and Replacement


   Type Designator: MSG160T65HLC1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 882 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 240 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 197 nS
   Coesⓘ - Output Capacitance, typ: 644 pF
   Package: TO247PLUS
      - IGBT Cross-Reference

 

MSG160T65HLC1 Datasheet (PDF)

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MSG160T65HLC1

MSG160T65HLC1Features Very Low Saturation Voltage:VCE(sat) = 2.1V @ IC = 160 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-Efficient Tight Parameter Distribution High Input ImpedanceApplications Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Other Power-Train ApplicationsRequiring High Power Switch

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXGA7N60CD1 | IXGT40N60C2D1 | 1MB08D-120 | IXGH64N60A3 | AOK40B65H2AL | MID300-12A4 | DM2G75SH6A

Keywords - MSG160T65HLC1 transistor datasheet

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