CRG40T120AK3S IGBT. Datasheet pdf. Equivalent

   Type Designator: CRG40T120AK3S
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G40T120AK3S
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 278 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 47.5 nS
   Coesⓘ - Output Capacitance, typ: 131 pF
   Qgⓘ - Total Gate Charge, typ: 208 nC
   Package: TO247

CRG40T120AK3S Transistor Equivalent Substitute - IGBT Cross-Reference Search

CRG40T120AK3S Datasheet (PDF)

..1. Size:1512K crhj
crg40t120ak3s.pdf

CRG40T120AK3S CRG40T120AK3S VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ; TO-247

..2. Size:1470K wuxi china
crg40t120ak3s.pdf

Silicon FS Trench IGBT CRG40T120AK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio

0.1. Size:1476K crhj
crg40t120ak3sd.pdf

CRG40T120AK3SD CRG40T120AK3SD VCES 1200 V RoHS IC 40 A Ptot TC=25 333 W VCE(sat) 1.9 V ; TO-247

0.2. Size:1472K wuxi china
crg40t120ak3sd.pdf

Silicon FS Trench IGBT CRG40T120AK3SD General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

5.1. Size:1273K crhj
crg40t120bk3s.pdf