CRG40T120AK3S Specs and Replacement
Type Designator: CRG40T120AK3S
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 278 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 47.5 nS
Coesⓘ - Output Capacitance, typ: 131 pF
Package: TO247
CRG40T120AK3S Substitution - IGBT ⓘ Cross-Reference Search
CRG40T120AK3S datasheet
crg40t120ak3s.pdf
Silicon FS Trench IGBT CRG40T120AK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25 VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio... See More ⇒
crg40t120ak3sd.pdf
Silicon FS Trench IGBT CRG40T120AK3SD General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25 VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati... See More ⇒
Specs: MSG30T65FS , MSG30T65FC , MSG40T65FL , MSG50T120FQW , MSG75T120FQC1 , MSG75T120FQW , MSG75T65FQC , CRG25T120BK3S , SGT40N60NPFDPN , CRG40T120AK3SD , CRG40T60AN3H , CRG40T60AN3HD , CRG40T60AK3HD , CRG40T65AK5H , CRG40T65AN5H , CRG40T65AK5HD , CRG40T65AN5HD .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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