CRG40T120AK3S IGBT. Datasheet pdf. Equivalent

   Type Designator: CRG40T120AK3S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 278
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 47.5
   Collector Capacity (Cc), typ, pF: 131
   Total Gate Charge (Qg), typ, nC: 208
   Package: TO247

CRG40T120AK3S Transistor Equivalent Substitute - IGBT Cross-Reference Search

CRG40T120AK3S Datasheet (PDF)

..1. Size:1512K crhj
crg40t120ak3s.pdf

CRG40T120AK3S CRG40T120AK3S VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ; TO-247

..2. Size:1470K wuxi china
crg40t120ak3s.pdf

Silicon FS Trench IGBT CRG40T120AK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio

0.1. Size:1476K crhj
crg40t120ak3sd.pdf

CRG40T120AK3SD CRG40T120AK3SD VCES 1200 V RoHS IC 40 A Ptot TC=25 333 W VCE(sat) 1.9 V ; TO-247

0.2. Size:1472K wuxi china
crg40t120ak3sd.pdf

Silicon FS Trench IGBT CRG40T120AK3SD General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

5.1. Size:1273K crhj
crg40t120bk3s.pdf