CRG75T60AK3HD IGBT. Datasheet pdf. Equivalent
Type Designator: CRG75T60AK3HD
Type: IGBT + Anti-Parallel Diode
Marking Code: G75T60AK3HD
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 390
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 150
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 92
Collector Capacity (Cc), typ, pF: 268
Total Gate Charge (Qg), typ, nC: 433
Package: TO247
CRG75T60AK3HD Transistor Equivalent Substitute - IGBT Cross-Reference Search
CRG75T60AK3HD Datasheet (PDF)
crg75t60ak3hd.pdf
CRG75T60AK3HD CRG75T60AK3HD FS IGBT VCES 600 V RoHS IC 75 A Ptot TC=25 390 W VCE(sat) 1.70 V FS TO-247 VCE(sat),TYP
crg75t60ak3hd.pdf
Silicon FS Trench IGBT CRG75T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 75 A Stop (FS) technology, offering superior conduction and switching 469 W Ptot TC=25VCE(sat) 1.70 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat
crg75t65ak5hd.pdf
CRG75T65AK5HD CRG75T65AK5HD FS IGBT VCES 650 V IC 75 A RoHS Ptot TC=25 468 W VCE(sat) 1.65 V TO-247 FS VCE(s
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ