CRG75T60AK3HD Datasheet. Specs and Replacement

Type Designator: CRG75T60AK3HD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 390 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 92 nS

Coesⓘ - Output Capacitance, typ: 268 pF

Package: TO247

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CRG75T60AK3HD datasheet

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CRG75T60AK3HD

CRG75T60AK3HD CRG75T60AK3HD FS IGBT VCES 600 V RoHS IC 75 A Ptot TC=25 390 W VCE(sat) 1.70 V FS TO-247 VCE(sat),TYP... See More ⇒

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CRG75T60AK3HD

Silicon FS Trench IGBT CRG75T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 75 A Stop (FS) technology, offering superior conduction and switching 469 W Ptot TC=25 VCE(sat) 1.70 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat... See More ⇒

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CRG75T60AK3HD

CRG75T65AK5HD CRG75T65AK5HD FS IGBT VCES 650 V IC 75 A RoHS Ptot TC=25 468 W VCE(sat) 1.65 V TO-247 FS VCE(s... See More ⇒

Specs: CRG40T60AN3H, CRG40T60AN3HD, CRG40T60AK3HD, CRG40T65AK5H, CRG40T65AN5H, CRG40T65AK5HD, CRG40T65AN5HD, CRG60T60AK3HD, FGH60N60SFD, CRG75T65AK5HD, CRGMF100T120FSA3, CRGMF50T120FSC, CRGMF75T120FSC, SPD15N65T1, SPT10N120T1, SPT15N120F1, SPT15N120T1

Keywords - CRG75T60AK3HD transistor spec

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