All IGBT. SPT20N120F1 Datasheet

 

SPT20N120F1 Datasheet and Replacement


   Type Designator: SPT20N120F1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 208 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 72 pF
   Qg ⓘ - Total Gate Charge, typ: 140 nC
   Package: TO247
 

 SPT20N120F1 substitution

   - IGBT ⓘ Cross-Reference Search

 

SPT20N120F1 Datasheet (PDF)

 ..1. Size:1821K  cn sptech
 spt20n120f1.pdf pdf_icon

SPT20N120F1

SPT20N120F11200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 20 A Cimproved reliabilityV I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

Datasheet: CRGMF100T120FSA3 , CRGMF50T120FSC , CRGMF75T120FSC , SPD15N65T1 , SPT10N120T1 , SPT15N120F1 , SPT15N120T1 , SPT15N65T1 , GT45F122 , SPT25N120F1A1 , SPT25N120T1 , SPT25N120U1 , SPT25N135F1A , SPT40N120 , SPL40N120 , SPT40N120F1A , SPT40N120F1A1 .

History: APT15GP60KG | IXEH40N120D1

Keywords - SPT20N120F1 transistor datasheet

 SPT20N120F1 cross reference
 SPT20N120F1 equivalent finder
 SPT20N120F1 lookup
 SPT20N120F1 substitution
 SPT20N120F1 replacement

 

 
Back to Top

 


 
.