All IGBT. SPT20N120F1 Datasheet

 

SPT20N120F1 IGBT. Datasheet pdf. Equivalent


   Type Designator: SPT20N120F1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 208
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Collector Current |Ic| @25℃, A: 40
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 22
   Collector Capacity (Cc), typ, pF: 72
   Total Gate Charge (Qg), typ, nC: 140
   Package: TO247

 SPT20N120F1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPT20N120F1 Datasheet (PDF)

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 spt20n120f1.pdf

SPT20N120F1 SPT20N120F1

SPT20N120F11200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 20 A Cimproved reliabilityV I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

Datasheet: CRGMF100T120FSA3 , CRGMF50T120FSC , CRGMF75T120FSC , SPD15N65T1 , SPT10N120T1 , SPT15N120F1 , SPT15N120T1 , SPT15N65T1 , SGH80N60UFD , SPT25N120F1A1 , SPT25N120T1 , SPT25N120U1 , SPT25N135F1A , SPT40N120 , SPL40N120 , SPT40N120F1A , SPT40N120F1A1 .

 

 
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