SPF15N65T1T1TL Datasheet and Replacement
Type Designator: SPF15N65T1T1TL
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 27 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 80 pF
Qg ⓘ - Total Gate Charge, typ: 92 nC
Package: TO220F
SPF15N65T1T1TL substitution
SPF15N65T1T1TL Datasheet (PDF)
spf15n65t1t1tl.pdf

SPF15N65T1T1TL650V /15A Trench Field Stop IGBT Features V 650 V CE Max Junction Temperature 150C High breakdown voltage up to 650V for I 15 A Cimproved reliabilityV I =15A 1.65 V CE(SAT) C Short Circuit Rated Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching applicat
spf15n65t1t2tl.pdf

SPF15N65T1T2TL650V /15A Trench Field Stop IGBT Features V 650 V CE Max Junction Temperature 150C High breakdown voltage up to 650V for I 15 A Cimproved reliabilityV I =15A 1.65 V CE(SAT) C Short Circuit Rated Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching applicat
Datasheet: SPT40N120F1A , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL , IRGP4066D , SPF15N65T1T2TL , SPT10N120T1T8TL , SPT15N120F1T8TL , SPT15N120T1T8TL , SPT25N120F1 , SPT25N120F1A1T8TL , SPT25N120T1T8TL , SPT25N120U1T8TL .
History: IGC19T65QE | HMG40N65T | NCE100ED65BT | IGW30N65L5 | CM150TX-24S1 | HGTP7N60B3 | 2MBI600VN-120-50
Keywords - SPF15N65T1T1TL transistor datasheet
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SPF15N65T1T1TL equivalent finder
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SPF15N65T1T1TL substitution
SPF15N65T1T1TL replacement
History: IGC19T65QE | HMG40N65T | NCE100ED65BT | IGW30N65L5 | CM150TX-24S1 | HGTP7N60B3 | 2MBI600VN-120-50



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