All IGBT. XNF6N60T Datasheet

 

XNF6N60T IGBT. Datasheet pdf. Equivalent


   Type Designator: XNF6N60T
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 30
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 12
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.3
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 16
   Collector Capacity (Cc), typ, pF: 20
   Total Gate Charge (Qg), typ, nC: 19
   Package: TO220F

 XNF6N60T Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

XNF6N60T Datasheet (PDF)

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 xnf6n60t.pdf

XNF6N60T XNF6N60T

Data Sheet XNF6N60T 600V/6A IGBT /PRODUCT FEATURES 2 + Advanced Trench+FS IGBT technology 1 Low Collector-Emitter Saturation voltage 3 With anti-parallel fast recovery diode TJ = 175 C Maximum junction temperature: TJ =

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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