All IGBT. IXGA8N100 Datasheet

 

IXGA8N100 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGA8N100

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1000

Maximum Collector Current |Ic|, A: 16

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 2.7

Package: TO263

IXGA8N100 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGA8N100 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGA8N100

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1000

Maximum Collector Current |Ic|, A: 16

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 2.7

Package: TO263

IXGA8N100 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGA8N100 Datasheet (PDF)

0.1. ixga8n100 ixgp8n100.pdf Size:554K _ixys

IXGA8N100
IXGA8N100

IXGA 8N100 VCES = 1000 V IGBT IXGP 8N100 IC25 = 16 A VCE(sat) = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TO-220AB (IXGP) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V G C E IC25 TC = 25°C16 A IC90 TC = 90°C8 A ICM TC = 25°C, 1 ms 32 A TO-263 AA (IXGA) SSOA VGE = 15 V,

0.2. ixga8n100.pdf Size:552K _ixys

IXGA8N100
IXGA8N100

IXGA 8N100 VCES = 1000 V IGBT IXGP 8N100 IC25 = 16 A VCE(sat) = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TO-220AB (IXGP) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V G C E IC25 TC = 25°C16 A IC90 TC = 90°C8 A ICM TC = 25°C, 1 ms 32 A TO-263 AA (IXGA) SSOA VGE = 15 V,

 

Datasheet: IXGA12N60CD1 , IXGA15N100C , IXGA15N120B , IXGA15N120C , IXGA20N100 , IXGA20N60B , IXGA7N60B , IXGA7N60C , IXGH40N60C2D1 , IXGD10N100 , IXGD10N60 , IXGD10N60A , IXGD17N100 , IXGD20N60A , IXGD25N100 , IXGD25N120 , IXGD60N60 .

 

 
Back to Top