All IGBT. IXGA8N100 Datasheet

 

IXGA8N100 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGA8N100
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 54 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 34 pF
   Qgⓘ - Total Gate Charge, typ: 26.5 nC
   Package: TO263

 IXGA8N100 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGA8N100 Datasheet (PDF)

 ..1. Size:554K  ixys
 ixga8n100 ixgp8n100.pdf

IXGA8N100 IXGA8N100

IXGA 8N100VCES = 1000 VIGBTIXGP 8N100IC25 = 16 AVCE(sat) = 2.7 VPreliminary data sheetSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C16 AIC90 TC = 90C8 AICM TC = 25C, 1 ms 32 ATO-263 AA (IXGA)SSOA VGE = 15 V,

 ..2. Size:552K  ixys
 ixga8n100.pdf

IXGA8N100 IXGA8N100

IXGA 8N100VCES = 1000 VIGBTIXGP 8N100IC25 = 16 AVCE(sat) = 2.7 VPreliminary data sheetSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C16 AIC90 TC = 90C8 AICM TC = 25C, 1 ms 32 ATO-263 AA (IXGA)SSOA VGE = 15 V,

Datasheet: IXGA12N60CD1 , IXGA15N100C , IXGA15N120B , IXGA15N120C , IXGA20N100 , IXGA20N60B , IXGA7N60B , IXGA7N60C , IKW40N65WR5 , IXGH32N60AU1S , IXGH40N30AS , IXGH40N30BS , IXGH50N60AS , IXGT32N60B , IXSM25N100 , IXSM25N100A , IXGH10N100U1 .

 

 
Back to Top