XNG100B24TC1S5 Specs and Replacement
Type Designator: XNG100B24TC1S5
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 463 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Package: MODULE XNG100B24TC1S5 Substitution - IGBT ⓘ Cross-Reference Search
XNG100B24TC1S5 datasheet
xng100b24tc1s5.pdf
Xiner XNG100B24TC1S5 1200V/100A IGBT Half-Bridge Module Features High frequency operation Low stray inductance High reliability and Power density Low switching loss and Vcesat Applications 34mm Half-Bridge Module Welding machine UPS Industry Inverter Motor Control Circuit Diagram Vces=1200v Ic=100A@Tc=100 Package Outlines Unit... See More ⇒
Specs: SPT40N120F1AT8TL , SPT40N120F1CT8TL , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , SPT60N65F1A1T8TL , XNF6N60T , AOK40B65H2AL , XNS25N120T , XNS40N120T , XD015H060CX1S3 , XD015H120CX1 , XD015H120CX1S3 , XD025H120CX1 , XD025H120CX1S3 , XD040H120AT1S3 .
History: TA49047 | NGTB35N65FL2WG
Keywords - XNG100B24TC1S5 transistor spec
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History: TA49047 | NGTB35N65FL2WG
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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