All IGBT. XNS25N120T Datasheet

 

XNS25N120T IGBT. Datasheet pdf. Equivalent


   Type Designator: XNS25N120T
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 310 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 63 pF
   Qgⓘ - Total Gate Charge, typ: 192 nC
   Package: TO247

 XNS25N120T Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

XNS25N120T Datasheet (PDF)

 ..1. Size:1109K  cn xiner
 xns25n120t.pdf

XNS25N120T XNS25N120T

Xiner XNS25N120T1200V25ATrench-FS IGBTFeatures Advanced Trench+FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typicaldata is 1.85V @ 25A. Easy parallel switching capability due to positiveTemperature coefficient in Vce. Fast switchingSchematic Diagram High input impedance Pb- Free productApplications Industry Invert

Datasheet: SPT40N120F1CT8TL , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , SPT60N65F1A1T8TL , XNF6N60T , XNG100B24TC1S5 , FGL60N100BNTD , XNS40N120T , XD015H060CX1S3 , XD015H120CX1 , XD015H120CX1S3 , XD025H120CX1 , XD025H120CX1S3 , XD040H120AT1S3 , XD040Q120AT1S3 .

 

 
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