XNS25N120T Specs and Replacement
Type Designator: XNS25N120T
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 310 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Coesⓘ - Output Capacitance, typ: 63 pF
Package: TO247
XNS25N120T Substitution - IGBT ⓘ Cross-Reference Search
XNS25N120T datasheet
xns25n120t.pdf
Xiner XNS25N120T 1200V 25A Trench-FS IGBT Features Advanced Trench+FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typical data is 1.85V @ 25A. Easy parallel switching capability due to positive Temperature coefficient in Vce. Fast switching Schematic Diagram High input impedance Pb- Free product Applications Industry Invert... See More ⇒
Specs: SPT40N120F1CT8TL , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , SPT60N65F1A1T8TL , XNF6N60T , XNG100B24TC1S5 , NGTB75N65FL2 , XNS40N120T , XD015H060CX1S3 , XD015H120CX1 , XD015H120CX1S3 , XD025H120CX1 , XD025H120CX1S3 , XD040H120AT1S3 , XD040Q120AT1S3 .
History: NGD18N45CLBT4G | SGP13N60UF
Keywords - XNS25N120T transistor spec
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History: NGD18N45CLBT4G | SGP13N60UF
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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