All IGBT. XNS25N120T Datasheet

 

XNS25N120T IGBT. Datasheet pdf. Equivalent


   Type Designator: XNS25N120T
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 310
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Collector Capacity (Cc), typ, pF: 63
   Total Gate Charge (Qg), typ, nC: 192
   Package: TO247

 XNS25N120T Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

XNS25N120T Datasheet (PDF)

 ..1. Size:1109K  cn xiner
 xns25n120t.pdf

XNS25N120T XNS25N120T

Xiner XNS25N120T1200V25ATrench-FS IGBTFeatures Advanced Trench+FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typicaldata is 1.85V @ 25A. Easy parallel switching capability due to positiveTemperature coefficient in Vce. Fast switchingSchematic Diagram High input impedance Pb- Free productApplications Industry Invert

Datasheet: SPT40N120F1CT8TL , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , SPT60N65F1A1T8TL , XNF6N60T , XNG100B24TC1S5 , IHW20N120R2 , XNS40N120T , XD015H060CX1S3 , XD015H120CX1 , XD015H120CX1S3 , XD025H120CX1 , XD025H120CX1S3 , XD040H120AT1S3 , XD040Q120AT1S3 .

 

 
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