All IGBT. XNS40N120T Datasheet

 

XNS40N120T Datasheet and Replacement


   Type Designator: XNS40N120T
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 480 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Package: TO247
      - IGBT Cross-Reference

 

XNS40N120T Datasheet (PDF)

 ..1. Size:518K  cn xiner
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XNS40N120T

Xiner XNS40N120T1200V40ATrench-FS IGBTFeatures Advanced Trench +FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typicaldata is 1.8V @ 40A. Short-Circuit withstand time-10uS Easy parallel switching capability due to positiveTemperature coefficient in Vce.Schematic Diagram Fast switching High input impedance Pb- Free pro

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: APT30GN60SG | 7MBP100VDA060-50 | 6MBI150VB-060-50 | SGR6N60UF | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH

Keywords - XNS40N120T transistor datasheet

 XNS40N120T cross reference
 XNS40N120T equivalent finder
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