XNS40N120T Specs and Replacement
Type Designator: XNS40N120T
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 480 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 240 pF
Package: TO247
XNS40N120T Substitution - IGBT ⓘ Cross-Reference Search
XNS40N120T datasheet
xns40n120t.pdf
Xiner XNS40N120T 1200V 40A Trench-FS IGBT Features Advanced Trench +FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typical data is 1.8V @ 40A. Short-Circuit withstand time-10uS Easy parallel switching capability due to positive Temperature coefficient in Vce. Schematic Diagram Fast switching High input impedance Pb- Free pro... See More ⇒
Specs: SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , SPT60N65F1A1T8TL , XNF6N60T , XNG100B24TC1S5 , XNS25N120T , FGH30S130P , XD015H060CX1S3 , XD015H120CX1 , XD015H120CX1S3 , XD025H120CX1 , XD025H120CX1S3 , XD040H120AT1S3 , XD040Q120AT1S3 , XD050H065CX1S3 .
History: SPT40N120F1CT8TL | TGAN40S160FD | SGM35PA12A6BTFD | YGW50N120FP | SII50N06 | SPM1004 | STGB19NC60HD
Keywords - XNS40N120T transistor spec
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History: SPT40N120F1CT8TL | TGAN40S160FD | SGM35PA12A6BTFD | YGW50N120FP | SII50N06 | SPM1004 | STGB19NC60HD
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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