All IGBT. XNS40N120T Datasheet

 

XNS40N120T IGBT. Datasheet pdf. Equivalent


   Type Designator: XNS40N120T
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 480 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Package: TO247

 XNS40N120T Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

XNS40N120T Datasheet (PDF)

 ..1. Size:518K  cn xiner
 xns40n120t.pdf

XNS40N120T XNS40N120T

Xiner XNS40N120T1200V40ATrench-FS IGBTFeatures Advanced Trench +FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typicaldata is 1.8V @ 40A. Short-Circuit withstand time-10uS Easy parallel switching capability due to positiveTemperature coefficient in Vce.Schematic Diagram Fast switching High input impedance Pb- Free pro

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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