All IGBT. XNS40N120T Datasheet

 

XNS40N120T Datasheet and Replacement


   Type Designator: XNS40N120T
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 480 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Qg ⓘ - Total Gate Charge, typ: 192 nC
   Package: TO247
 

 XNS40N120T substitution

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XNS40N120T Datasheet (PDF)

 ..1. Size:518K  cn xiner
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XNS40N120T

Xiner XNS40N120T1200V40ATrench-FS IGBTFeatures Advanced Trench +FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typicaldata is 1.8V @ 40A. Short-Circuit withstand time-10uS Easy parallel switching capability due to positiveTemperature coefficient in Vce.Schematic Diagram Fast switching High input impedance Pb- Free pro

Datasheet: SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , SPT60N65F1A1T8TL , XNF6N60T , XNG100B24TC1S5 , XNS25N120T , IRG4PC50U , XD015H060CX1S3 , XD015H120CX1 , XD015H120CX1S3 , XD025H120CX1 , XD025H120CX1S3 , XD040H120AT1S3 , XD040Q120AT1S3 , XD050H065CX1S3 .

History: IXEH40N120D1

Keywords - XNS40N120T transistor datasheet

 XNS40N120T cross reference
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