All IGBT. XNS40N120T Datasheet

 

XNS40N120T IGBT. Datasheet pdf. Equivalent


   Type Designator: XNS40N120T
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 480
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 30
   Collector Capacity (Cc), typ, pF: 240
   Total Gate Charge (Qg), typ, nC: 192
   Package: TO247

 XNS40N120T Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

XNS40N120T Datasheet (PDF)

 ..1. Size:518K  cn xiner
 xns40n120t.pdf

XNS40N120T XNS40N120T

Xiner XNS40N120T1200V40ATrench-FS IGBTFeatures Advanced Trench +FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typicaldata is 1.8V @ 40A. Short-Circuit withstand time-10uS Easy parallel switching capability due to positiveTemperature coefficient in Vce.Schematic Diagram Fast switching High input impedance Pb- Free pro

Datasheet: SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , SPT60N65F1A1T8TL , XNF6N60T , XNG100B24TC1S5 , XNS25N120T , NCE60TD60BT , XD015H060CX1S3 , XD015H120CX1 , XD015H120CX1S3 , XD025H120CX1 , XD025H120CX1S3 , XD040H120AT1S3 , XD040Q120AT1S3 , XD050H065CX1S3 .

 

 
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