XD075H065CX1S3 Datasheet and Replacement
Type Designator: XD075H065CX1S3
Type: IGBT + Anti-Parallel Diode
Marking Code: D75H65CX1
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 385 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 110 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 91 nS
Coesⓘ - Output Capacitance, typ: 355 pF
Qgⓘ - Total Gate Charge, typ: 118 nC
Package: TO247
- IGBT Cross-Reference
XD075H065CX1S3 Datasheet (PDF)
xd075h065cx1s3.pdf

XD075H065CX1S3 Trench Field-Stop Technology IGBT Features 650V, 75A V =1.80V@V =15V, I =75A CE(sat)(typ.) GE C Maximum Junction Temperature 175 Pb-free Lead Plating; RoHS Compliant Applications Solar Converters Uninterrupted Power Supply Welding Converters Mid to High Range Switching Frequency Converters Key Performance and Package Par
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MIXA50WB600TED | BSM200GB120DLC | STGW40H120F2 | MIAA10WD600TMH | MMG450WE065B6EN
Keywords - XD075H065CX1S3 transistor datasheet
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XD075H065CX1S3 replacement
History: MIXA50WB600TED | BSM200GB120DLC | STGW40H120F2 | MIAA10WD600TMH | MMG450WE065B6EN



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