XP040PJE120AL1B2 Datasheet and Replacement
Type Designator: XP040PJE120AL1B2
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 193 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 40(100C) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.83 V @25℃
trⓘ - Rise Time, typ: 48 nS
Package: MODULE
- IGBT Cross-Reference
XP040PJE120AL1B2 Datasheet (PDF)
xp040pje120al1b2.pdf

XP040PJE120AL1B2PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTCFeatures VCE=1200V IC=40ALow VCE(sat)VCEsat with positive temperature coefficientApplications The inverter Motor control and drivesEquivalent Circuit SchematicIGBT - InverterMaximum Rated ValuesSymbol Description Conditions Values UnitVCES Collector-Emitter Voltage Tvj=25
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: 2MBI100UA-120 | SKM150GB12T4
Keywords - XP040PJE120AL1B2 transistor datasheet
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XP040PJE120AL1B2 replacement
History: 2MBI100UA-120 | SKM150GB12T4



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