XP040PJE120AL1B2 PDF and Equivalents Search

 

XP040PJE120AL1B2 Specs and Replacement

Type Designator: XP040PJE120AL1B2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 193 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 40(100C) A @25℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.83 V @25℃

tr ⓘ - Rise Time, typ: 48 nS

Package: MODULE

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XP040PJE120AL1B2 datasheet

 0.1. Size:841K  cn xdm
 xp040pje120al1b2.pdf pdf_icon

XP040PJE120AL1B2

XP040PJE120AL1B2 PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTC Features VCE=1200V IC=40A Low VCE(sat) VCEsat with positive temperature coefficient Applications The inverter Motor control and drives Equivalent Circuit Schematic IGBT - Inverter Maximum Rated Values Symbol Description Conditions Values Unit VCES Collector-Emitter Voltage Tvj=25 ... See More ⇒

Specs: XD040Q120AT1S3 , XD050H065CX1S3 , XD050H120CX1S4 , XD075H065CX1S3 , XP015PJE120AT1B1 , XP015PJS120CL1B1 , XP025PJE120AT1B2 , XP035PJE120AT1B2 , IRG4PF50W , XP050PCE120AT1E2 , XP075HFN120CT1R3 , XP075PCE120AL1E3 , XP15PJS120CL1B1 , XP25PJT120C0B2 , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , SGM100HF12A3TFD .

History: TT040K120EQ | SGW13N60UF

Keywords - XP040PJE120AL1B2 transistor spec

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