All IGBT. XP040PJE120AL1B2 Datasheet

 

XP040PJE120AL1B2 Datasheet and Replacement


   Type Designator: XP040PJE120AL1B2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 193 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 40(100C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.83 V @25℃
   trⓘ - Rise Time, typ: 48 nS
   Package: MODULE
      - IGBT Cross-Reference

 

XP040PJE120AL1B2 Datasheet (PDF)

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XP040PJE120AL1B2

XP040PJE120AL1B2PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTCFeatures VCE=1200V IC=40ALow VCE(sat)VCEsat with positive temperature coefficientApplications The inverter Motor control and drivesEquivalent Circuit SchematicIGBT - InverterMaximum Rated ValuesSymbol Description Conditions Values UnitVCES Collector-Emitter Voltage Tvj=25

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: 2MBI100UA-120 | SKM150GB12T4

Keywords - XP040PJE120AL1B2 transistor datasheet

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