XP050PCE120AT1E2 Datasheet and Replacement
Type Designator: XP050PCE120AT1E2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 108 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50(100C) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.07 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7(typ) V
tr ⓘ - Rise Time, typ: 34 nS
Package: MODULE
XP050PCE120AT1E2 substitution
XP050PCE120AT1E2 Datasheet (PDF)
xp050pce120at1e2.pdf
XP050PCE120AT1E2PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTCFeatures VCE=1200V IC=50ALow VCE(sat) with Positive Temperature CoefficientTrench+ Field Stop TechnologyApplications The inverterMotor control and drivesAuxiliary InvertersEquivalent Circuit SchematicIGBT - InverterMaximum Rated ValuesSymbol Description Conditions Values
Datasheet: XD050H065CX1S3 , XD050H120CX1S4 , XD075H065CX1S3 , XP015PJE120AT1B1 , XP015PJS120CL1B1 , XP025PJE120AT1B2 , XP035PJE120AT1B2 , XP040PJE120AL1B2 , NGTB75N65FL2 , XP075HFN120CT1R3 , XP075PCE120AL1E3 , XP15PJS120CL1B1 , XP25PJT120C0B2 , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , SGM100HF12A3TFD , SGM150HF12A3TFD .
History: FGH60N60UFDTU-F085
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History: FGH60N60UFDTU-F085
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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