XP050PCE120AT1E2 IGBT. Datasheet pdf. Equivalent
Type Designator: XP050PCE120AT1E2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 108 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50(100C) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.07 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7(typ) V
trⓘ - Rise Time, typ: 34 nS
Package: MODULE
XP050PCE120AT1E2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
XP050PCE120AT1E2 Datasheet (PDF)
xp050pce120at1e2.pdf
XP050PCE120AT1E2PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTCFeatures VCE=1200V IC=50ALow VCE(sat) with Positive Temperature CoefficientTrench+ Field Stop TechnologyApplications The inverterMotor control and drivesAuxiliary InvertersEquivalent Circuit SchematicIGBT - InverterMaximum Rated ValuesSymbol Description Conditions Values
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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