All IGBT. SGM100HF12A1TFD Datasheet

 

SGM100HF12A1TFD Datasheet and Replacement


   Type Designator: SGM100HF12A1TFD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100(80C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 186 nS
   Coesⓘ - Output Capacitance, typ: 1835 pF
   Qg ⓘ - Total Gate Charge, typ: 743 nC
   Package: MODULE
 

 SGM100HF12A1TFD substitution

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SGM100HF12A1TFD Datasheet (PDF)

 0.1. Size:669K  silan
sgm100hf12a1tfdt4.pdf pdf_icon

SGM100HF12A1TFD

SGM100HF12A1TFDT4 100A1200V IGBT SGM100HF12A1TFDT4 100A1200VVCE(sat)( ) =2.1V@IC=100A VCE(sat) A1 DBC

 0.2. Size:403K  silan
sgm100hf12a1tfd.pdf pdf_icon

SGM100HF12A1TFD

SGM100HF12A1TFD 100A, 1200V IGBT 0B SGM100HF12A1TFD 1B 100A1200VVCE(sat)( ) =2.1V@IC=100A VCE(sat) A1 DBC

 3.1. Size:388K  silan
sgm100hf12a3tfd.pdf pdf_icon

SGM100HF12A1TFD

SGM100HF12A3TFD 100A1200V IGBT 0B SGM100HF12A3TFD 1B 100A1200VVCE(sat)( ) =2.1V@IC=100A VCE(sat) A3 DBC

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXGA20N250HV | AOTS40B65H1 | MIXA60W1200TED | MMG600K120U6TN | AOT10B65M2 | XD025H120CX1

Keywords - SGM100HF12A1TFD transistor datasheet

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