SGM100HF12A1TFDT4 PDF and Equivalents Search

 

SGM100HF12A1TFDT4 Specs and Replacement

Type Designator: SGM100HF12A1TFDT4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100(80C) A @25℃

Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 150 nS

Coesⓘ - Output Capacitance, typ: 460 pF

Package: MODULE

 SGM100HF12A1TFDT4 Substitution

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SGM100HF12A1TFDT4 datasheet

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SGM100HF12A1TFDT4

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SGM100HF12A1TFDT4

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 3.1. Size:388K  silan
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SGM100HF12A1TFDT4

SGM100HF12A3TFD 100A 1200V IGBT 0B SGM100HF12A3TFD 1B 100A 1200V VCE(sat)( ) =2.1V@IC=100A VCE(sat) A3 DBC ... See More ⇒

Specs: XP035PJE120AT1B2 , XP040PJE120AL1B2 , XP050PCE120AT1E2 , XP075HFN120CT1R3 , XP075PCE120AL1E3 , XP15PJS120CL1B1 , XP25PJT120C0B2 , SGM100HF12A1TFD , IRG7S313U , SGM100HF12A3TFD , SGM150HF12A3TFD , SGM200HF12A3TFD , SGM25PA12A8TFD , SGM35PA12A6BTFD , SGM40HF12A1TFD , SGM50HF12A1TFD , SGM50HF12A1TFDT4 .

History: SRE40N065FSUR | NGTB35N65FL2WG

Keywords - SGM100HF12A1TFDT4 transistor spec

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