SGM150HF12A3TFD IGBT. Datasheet pdf. Equivalent
Type Designator: SGM150HF12A3TFD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150(80C) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 123 nS
Coesⓘ - Output Capacitance, typ: 1215 pF
Qgⓘ - Total Gate Charge, typ: 707 nC
Package: MODULE
SGM150HF12A3TFD Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGM150HF12A3TFD Datasheet (PDF)
sgm150hf12a3tfd.pdf
SGM150HF12A3TFD 150A, 1200V IGBT SGM150HF12A3TFD 20KHz 150A1200VVCE(sat)( ) =2.2V@IC=150A VCE(sat)
nsgm150gb120b.pdf
SEMICONDUCTOR48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORRoHS RoHS SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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