All IGBT. SGM150HF12A3TFD Datasheet

 

SGM150HF12A3TFD Datasheet and Replacement


   Type Designator: SGM150HF12A3TFD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150(80C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 123 nS
   Coesⓘ - Output Capacitance, typ: 1215 pF
   Qg ⓘ - Total Gate Charge, typ: 707 nC
   Package: MODULE
 

 SGM150HF12A3TFD substitution

   - IGBT ⓘ Cross-Reference Search

 

SGM150HF12A3TFD Datasheet (PDF)

 0.1. Size:353K  silan
 sgm150hf12a3tfd.pdf pdf_icon

SGM150HF12A3TFD

SGM150HF12A3TFD 150A, 1200V IGBT SGM150HF12A3TFD 20KHz 150A1200VVCE(sat)( ) =2.2V@IC=150A VCE(sat)

 8.1. Size:1403K  nell
 nsgm150gb120b.pdf pdf_icon

SGM150HF12A3TFD

SEMICONDUCTOR48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORRoHS RoHS SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MMG200DR060UZK | TGAN15S135FD

Keywords - SGM150HF12A3TFD transistor datasheet

 SGM150HF12A3TFD cross reference
 SGM150HF12A3TFD equivalent finder
 SGM150HF12A3TFD lookup
 SGM150HF12A3TFD substitution
 SGM150HF12A3TFD replacement

 

 
Back to Top

 


 
.