SGM150HF12A3TFD Datasheet and Replacement
Type Designator: SGM150HF12A3TFD
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150(80C) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 123 nS
Coesⓘ - Output Capacitance, typ: 1215 pF
Package: MODULE
SGM150HF12A3TFD substitution
SGM150HF12A3TFD Datasheet (PDF)
sgm150hf12a3tfd.pdf

SGM150HF12A3TFD 150A, 1200V IGBT SGM150HF12A3TFD 20KHz 150A1200VVCE(sat)( ) =2.2V@IC=150A VCE(sat)
nsgm150gb120b.pdf

SEMICONDUCTOR48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORRoHS RoHS SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR
Datasheet: XP050PCE120AT1E2 , XP075HFN120CT1R3 , XP075PCE120AL1E3 , XP15PJS120CL1B1 , XP25PJT120C0B2 , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , SGM100HF12A3TFD , IRGP4063 , SGM200HF12A3TFD , SGM25PA12A8TFD , SGM35PA12A6BTFD , SGM40HF12A1TFD , SGM50HF12A1TFD , SGM50HF12A1TFDT4 , SGM50PA12A6BTFD , SGM75HF12A1TFD .
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