SGM150HF12A3TFD Specs and Replacement
Type Designator: SGM150HF12A3TFD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150(80C) A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 123 nS
Coesⓘ - Output Capacitance, typ: 1215 pF
Package: MODULE SGM150HF12A3TFD Substitution - IGBT ⓘ Cross-Reference Search
SGM150HF12A3TFD datasheet
sgm150hf12a3tfd.pdf
SGM150HF12A3TFD 150A, 1200V IGBT SGM150HF12A3TFD 20KHz 150A 1200V VCE(sat)( ) =2.2V@IC=150A VCE(sat) ... See More ⇒
nsgm150gb120b.pdf
SEMICONDUCTOR 48.5 25 25 C2E1 E2 C1 3-M6 93+0.3 4- 6.5 108+0.5 14 14 14 2.8 4-0.5 All dimensions in millimeters 27 15 17.8 48+0.3 62.5+0.5 G1 E1 E2 G2 30.9 30.5 22.5 SEMICONDUCTOR RoHS RoHS SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR ... See More ⇒
Specs: XP050PCE120AT1E2 , XP075HFN120CT1R3 , XP075PCE120AL1E3 , XP15PJS120CL1B1 , XP25PJT120C0B2 , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , SGM100HF12A3TFD , GT30F132 , SGM200HF12A3TFD , SGM25PA12A8TFD , SGM35PA12A6BTFD , SGM40HF12A1TFD , SGM50HF12A1TFD , SGM50HF12A1TFDT4 , SGM50PA12A6BTFD , SGM75HF12A1TFD .
History: VS-GP100TS60SFPBF
Keywords - SGM150HF12A3TFD transistor spec
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History: VS-GP100TS60SFPBF
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