SGM25PA12A8TFD Datasheet and Replacement
Type Designator: SGM25PA12A8TFD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 275 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25(100C) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.2 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 110 nS
Coesⓘ - Output Capacitance, typ: 210 pF
Qg ⓘ - Total Gate Charge, typ: 280 nC
Package: MODULE
SGM25PA12A8TFD substitution
SGM25PA12A8TFD Datasheet (PDF)
sgm25pa12a8tfd.pdf
SGM25PA12A8TFD 25A/1200V IGBT SGM25PA12A8TFD 25A/1200VVCE(sat)( ) =2.1V@IC=25A VCE(sat) A8 DBC
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: YGP15N65T2
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History: YGP15N65T2
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