SGM25PA12A8TFD Specs and Replacement
Type Designator: SGM25PA12A8TFD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 275 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25(100C) A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 110 nS
Coesⓘ - Output Capacitance, typ: 210 pF
Package: MODULE SGM25PA12A8TFD Substitution - IGBT ⓘ Cross-Reference Search
SGM25PA12A8TFD datasheet
Specs: XP075PCE120AL1E3 , XP15PJS120CL1B1 , XP25PJT120C0B2 , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , SGM100HF12A3TFD , SGM150HF12A3TFD , SGM200HF12A3TFD , CRG40T65AK5HD , SGM35PA12A6BTFD , SGM40HF12A1TFD , SGM50HF12A1TFD , SGM50HF12A1TFDT4 , SGM50PA12A6BTFD , SGM75HF12A1TFD , SGM75HF12A1TFD1 , SGM75HF12A1TFDT4 .
History: STGW50HF60SD
Keywords - SGM25PA12A8TFD transistor spec
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History: STGW50HF60SD
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