SGM25PA12A8TFD IGBT. Datasheet pdf. Equivalent

   Type Designator: SGM25PA12A8TFD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 275
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 25(100C)
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7.2
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 110
   Collector Capacity (Cc), typ, pF: 210
   Total Gate Charge (Qg), typ, nC: 280
   Package: MODULE

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