SGM35PA12A6BTFD Datasheet and Replacement
Type Designator: SGM35PA12A6BTFD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 35(100C) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.2 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 150 nS
Coesⓘ - Output Capacitance, typ: 720 pF
Qg ⓘ - Total Gate Charge, typ: 420 nC
Package: MODULE
SGM35PA12A6BTFD substitution
SGM35PA12A6BTFD Datasheet (PDF)
sgm35pa12a6btfd.pdf
SGM35PA12A6BTFD 35A/1200V IGBT SGM35PA12A6BTFD 35A/1200VVCE(sat)( ) =2.2V@IC=35A VCE(sat) A6B DBC
Datasheet: XP15PJS120CL1B1 , XP25PJT120C0B2 , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , SGM100HF12A3TFD , SGM150HF12A3TFD , SGM200HF12A3TFD , SGM25PA12A8TFD , BT15T120ANF , SGM40HF12A1TFD , SGM50HF12A1TFD , SGM50HF12A1TFDT4 , SGM50PA12A6BTFD , SGM75HF12A1TFD , SGM75HF12A1TFD1 , SGM75HF12A1TFDT4 , SGM75HF12A1TLD .
History: IRG4BC10K
Keywords - SGM35PA12A6BTFD transistor datasheet
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SGM35PA12A6BTFD replacement
History: IRG4BC10K
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