SGM35PA12A6BTFD PDF and Equivalents Search

 

SGM35PA12A6BTFD Specs and Replacement

Type Designator: SGM35PA12A6BTFD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 260 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 35(100C) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 150 nS

Coesⓘ - Output Capacitance, typ: 720 pF

Package: MODULE

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SGM35PA12A6BTFD datasheet

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SGM35PA12A6BTFD

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Specs: XP15PJS120CL1B1 , XP25PJT120C0B2 , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , SGM100HF12A3TFD , SGM150HF12A3TFD , SGM200HF12A3TFD , SGM25PA12A8TFD , FGPF4533 , SGM40HF12A1TFD , SGM50HF12A1TFD , SGM50HF12A1TFDT4 , SGM50PA12A6BTFD , SGM75HF12A1TFD , SGM75HF12A1TFD1 , SGM75HF12A1TFDT4 , SGM75HF12A1TLD .

History: STGB19NC60HD | TGAN40S160FD | SII50N06 | STGWA15M120DF3 | XD040Q120AT1S3 | YGW50N120FP | SII300N06

Keywords - SGM35PA12A6BTFD transistor spec

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