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2SH15 Spec and Replacement


   Type Designator: 2SH15
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 350 nS
   Package: TO3P

 2SH15 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2SH15 specs

 ..1. Size:46K  hitachi
 2sh15.pdf pdf_icon

2SH15

ADE 208 288 (Z) 2SH15 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application TO 3P High speed power switching Features 2 High speed switching Low on saturation voltage 1 1. Gate 2. Collector 1 3 2 3. Emitter 3 Table 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit ... See More ⇒

Specs: 2N6978 , 2PG352 , 2PG401 , 2PG402 , 2SH11 , 2SH12 , 2SH13 , 2SH14 , CRG75T60AK3HD , 2SH16 , 2SH17 , 2SH18 , 2SH19 , 2SH20 , 2SH21 , 2SH22 , 2SH26 .

Keywords - 2SH15 transistor spec

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