SGM40HF12A1TFD Datasheet and Replacement
Type Designator: SGM40HF12A1TFD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40(100C) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 154 nS
Coesⓘ - Output Capacitance, typ: 789 pF
Qgⓘ - Total Gate Charge, typ: 413 nC
Package: MODULE
- IGBT Cross-Reference
SGM40HF12A1TFD Datasheet (PDF)
sgm40hf12a1tfd.pdf
SGM40HF12A1TFD 40A, 1200V IGBT SGM40HF12A1TFD , 40A1200VVCE(sat)( ) =2.6V@IC=40A VCE(sat) A1 DBC
Datasheet: XP25PJT120C0B2 , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , SGM100HF12A3TFD , SGM150HF12A3TFD , SGM200HF12A3TFD , SGM25PA12A8TFD , SGM35PA12A6BTFD , GT30F124 , SGM50HF12A1TFD , SGM50HF12A1TFDT4 , SGM50PA12A6BTFD , SGM75HF12A1TFD , SGM75HF12A1TFD1 , SGM75HF12A1TFDT4 , SGM75HF12A1TLD , SGT15T60QD1F .
History: HIA50N65T-SA | SG50N06DS | APT11GF120BRD1
Keywords - SGM40HF12A1TFD transistor datasheet
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SGM40HF12A1TFD replacement
History: HIA50N65T-SA | SG50N06DS | APT11GF120BRD1
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