SGM40HF12A1TFD Specs and Replacement
Type Designator: SGM40HF12A1TFD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40(100C) A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
tr ⓘ - Rise Time, typ: 154 nS
Coesⓘ - Output Capacitance, typ: 789 pF
Package: MODULE SGM40HF12A1TFD Substitution - IGBT ⓘ Cross-Reference Search
SGM40HF12A1TFD datasheet
Specs: XP25PJT120C0B2 , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , SGM100HF12A3TFD , SGM150HF12A3TFD , SGM200HF12A3TFD , SGM25PA12A8TFD , SGM35PA12A6BTFD , GT30F124 , SGM50HF12A1TFD , SGM50HF12A1TFDT4 , SGM50PA12A6BTFD , SGM75HF12A1TFD , SGM75HF12A1TFD1 , SGM75HF12A1TFDT4 , SGM75HF12A1TLD , SGT15T60QD1F .
History: SRE40N065FSUR | NGTB35N65FL2WG
Keywords - SGM40HF12A1TFD transistor spec
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History: SRE40N065FSUR | NGTB35N65FL2WG
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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