All IGBT. SGM50HF12A1TFDT4 Datasheet

 

SGM50HF12A1TFDT4 IGBT. Datasheet pdf. Equivalent


   Type Designator: SGM50HF12A1TFDT4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 235
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 50(80C)
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8
   Maximum Junction Temperature (Tj), ℃: 125
   Rise Time (tr), typ, nS: 30
   Collector Capacity (Cc), typ, pF: 260
   Total Gate Charge (Qg), typ, nC: 420
   Package: MODULE

 SGM50HF12A1TFDT4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGM50HF12A1TFDT4 Datasheet (PDF)

 ..1. Size:356K  silan
 sgm50hf12a1tfd.pdf

SGM50HF12A1TFDT4 SGM50HF12A1TFDT4

SGM50HF12A1TFD 50A, 1200V IGBT SGM50HF12A1TFD , 20KHz 50A1200VVCE(sat)( ) =1.7V@IC=50A VCE(sat)

 0.1. Size:640K  silan
 sgm50hf12a1tfdt4.pdf

SGM50HF12A1TFDT4 SGM50HF12A1TFDT4

SGM50HF12A1TFDT4 50A1200V IGBT SGM50HF12A1TFDT4 50A1200VVCE(sat)( ) =2.0V@IC=50A VCE(sat) A1 DBC

 9.1. Size:1248K  silan
 sgm50pa12a6btfd.pdf

SGM50HF12A1TFDT4 SGM50HF12A1TFDT4

SGM50PA12A6BTFD 50A/1200V IGBT SGM50PA12A6BTFD 50A/1200VVCE(sat)( ) =2.2V@IC=50A VCE(sat) A6B DBC

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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