All IGBT. SGM50PA12A6BTFD Datasheet

 

SGM50PA12A6BTFD Datasheet and Replacement


   Type Designator: SGM50PA12A6BTFD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 263 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50(100C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 122 nS
   Coesⓘ - Output Capacitance, typ: 670 pF
   Qgⓘ - Total Gate Charge, typ: 430 nC
   Package: MODULE
      - IGBT Cross-Reference

 

SGM50PA12A6BTFD Datasheet (PDF)

 0.1. Size:1248K  silan
 sgm50pa12a6btfd.pdf pdf_icon

SGM50PA12A6BTFD

SGM50PA12A6BTFD 50A/1200V IGBT SGM50PA12A6BTFD 50A/1200VVCE(sat)( ) =2.2V@IC=50A VCE(sat) A6B DBC

 9.1. Size:640K  silan
 sgm50hf12a1tfdt4.pdf pdf_icon

SGM50PA12A6BTFD

SGM50HF12A1TFDT4 50A1200V IGBT SGM50HF12A1TFDT4 50A1200VVCE(sat)( ) =2.0V@IC=50A VCE(sat) A1 DBC

 9.2. Size:356K  silan
 sgm50hf12a1tfd.pdf pdf_icon

SGM50PA12A6BTFD

SGM50HF12A1TFD 50A, 1200V IGBT SGM50HF12A1TFD , 20KHz 50A1200VVCE(sat)( ) =1.7V@IC=50A VCE(sat)

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: YGQ100N65FP | IXA12IF1200PB | JT015N065FED

Keywords - SGM50PA12A6BTFD transistor datasheet

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 SGM50PA12A6BTFD replacement

 

 
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