All IGBT. SGM50PA12A6BTFD Datasheet

 

SGM50PA12A6BTFD Datasheet and Replacement


   Type Designator: SGM50PA12A6BTFD
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 263 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50(100C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 122 nS
   Coesⓘ - Output Capacitance, typ: 670 pF
   Package: MODULE
 

 SGM50PA12A6BTFD substitution

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SGM50PA12A6BTFD Datasheet (PDF)

 0.1. Size:1248K  silan
 sgm50pa12a6btfd.pdf pdf_icon

SGM50PA12A6BTFD

SGM50PA12A6BTFD 50A/1200V IGBT SGM50PA12A6BTFD 50A/1200VVCE(sat)( ) =2.2V@IC=50A VCE(sat) A6B DBC

 9.1. Size:640K  silan
 sgm50hf12a1tfdt4.pdf pdf_icon

SGM50PA12A6BTFD

SGM50HF12A1TFDT4 50A1200V IGBT SGM50HF12A1TFDT4 50A1200VVCE(sat)( ) =2.0V@IC=50A VCE(sat) A1 DBC

 9.2. Size:356K  silan
 sgm50hf12a1tfd.pdf pdf_icon

SGM50PA12A6BTFD

SGM50HF12A1TFD 50A, 1200V IGBT SGM50HF12A1TFD , 20KHz 50A1200VVCE(sat)( ) =1.7V@IC=50A VCE(sat)

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: STGWA30M65DF2 | MMG600WB065TLA6EN | 1MBI30L-060 | XD075H065CX1S3 | AIKW30N60CT | IKFW50N65DH5 | MIXD600PF650TSF

Keywords - SGM50PA12A6BTFD transistor datasheet

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