All IGBT. SGM75HF12A1TFD1 Datasheet

 

SGM75HF12A1TFD1 Datasheet and Replacement


   Type Designator: SGM75HF12A1TFD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75(80C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.7 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 90 nS
   Coesⓘ - Output Capacitance, typ: 720 pF
   Qgⓘ - Total Gate Charge, typ: 530 nC
   Package: MODULE
      - IGBT Cross-Reference

 

SGM75HF12A1TFD1 Datasheet (PDF)

 ..1. Size:340K  silan
 sgm75hf12a1tfd.pdf pdf_icon

SGM75HF12A1TFD1

SGM75HF12A1TFD 75A, 1200V IGBT SGM75HF12A1TFD , 20KHz 75A, 1200V, VCE(sat)( ) =2.1V@IC=75A VCE(sat) DB

 0.1. Size:688K  silan
 sgm75hf12a1tfd1.pdf pdf_icon

SGM75HF12A1TFD1

SGM75HF12A1TFD 75A1200V IGBT SGM75HF12A1TFD 75A1200VVCE(sat)( ) =2.2V@IC=75A VCE(sat) A1 DBC

 0.2. Size:736K  silan
 sgm75hf12a1tfdt4.pdf pdf_icon

SGM75HF12A1TFD1

SGM75HF12A1TFDT4 75A1200V IGBT SGM75HF12A1TFDT4 75A1200VVCE(sat)( ) =1.98V@IC=75A VCE(sat) A1 DBC

 2.1. Size:600K  silan
 sgm75hf12a1tld.pdf pdf_icon

SGM75HF12A1TFD1

SGM75HF12A1TLD 75A, 1200V IGBT SGM75HF12A1TLD , 75A1200VVCE(sat)( ) =2.0V@IC=75A VCE(sat) A1 VCE(sat) DBC TL

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History: AP30G120ASW | SG7N06P | FGA25S125P | YGK20N65T2 | YGW20N65T2 | IXSM40N60 | IXSM30N60A

Keywords - SGM75HF12A1TFD1 transistor datasheet

 SGM75HF12A1TFD1 cross reference
 SGM75HF12A1TFD1 equivalent finder
 SGM75HF12A1TFD1 lookup
 SGM75HF12A1TFD1 substitution
 SGM75HF12A1TFD1 replacement

 

 
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