All IGBT. SGM75HF12A1TLD Datasheet

 

SGM75HF12A1TLD Datasheet and Replacement


   Type Designator: SGM75HF12A1TLD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 357 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75(80C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 720 pF
   Qg ⓘ - Total Gate Charge, typ: 530 nC
   Package: MODULE
 

 SGM75HF12A1TLD substitution

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SGM75HF12A1TLD Datasheet (PDF)

 ..1. Size:600K  silan
 sgm75hf12a1tld.pdf pdf_icon

SGM75HF12A1TLD

SGM75HF12A1TLD 75A, 1200V IGBT SGM75HF12A1TLD , 75A1200VVCE(sat)( ) =2.0V@IC=75A VCE(sat) A1 VCE(sat) DBC TL

 2.1. Size:340K  silan
 sgm75hf12a1tfd.pdf pdf_icon

SGM75HF12A1TLD

SGM75HF12A1TFD 75A, 1200V IGBT SGM75HF12A1TFD , 20KHz 75A, 1200V, VCE(sat)( ) =2.1V@IC=75A VCE(sat) DB

 2.2. Size:688K  silan
 sgm75hf12a1tfd1.pdf pdf_icon

SGM75HF12A1TLD

SGM75HF12A1TFD 75A1200V IGBT SGM75HF12A1TFD 75A1200VVCE(sat)( ) =2.2V@IC=75A VCE(sat) A1 DBC

 2.3. Size:736K  silan
 sgm75hf12a1tfdt4.pdf pdf_icon

SGM75HF12A1TLD

SGM75HF12A1TFDT4 75A1200V IGBT SGM75HF12A1TFDT4 75A1200VVCE(sat)( ) =1.98V@IC=75A VCE(sat) A1 DBC

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - SGM75HF12A1TLD transistor datasheet

 SGM75HF12A1TLD cross reference
 SGM75HF12A1TLD equivalent finder
 SGM75HF12A1TLD lookup
 SGM75HF12A1TLD substitution
 SGM75HF12A1TLD replacement

 

 
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