All IGBT. SGT25T120FD1P7 Datasheet

 

SGT25T120FD1P7 Datasheet and Replacement


   Type Designator: SGT25T120FD1P7
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 25T120FD1
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.25 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 63 nS
   Coesⓘ - Output Capacitance, typ: 128 pF
   Qg ⓘ - Total Gate Charge, typ: 120 nC
   Package: TO247
 

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SGT25T120FD1P7 Datasheet (PDF)

 ..1. Size:323K  silan
 sgt25t120fd1p7.pdf pdf_icon

SGT25T120FD1P7

SGT25T120FD1P7 25A1200V SGT25T120FD1P7 Trench Field Stop UPSSMPS PFC 25A1200VVCE(sat)( )=2.25V@

 9.1. Size:664K  silan
 sgt25u120fd1p7.pdf pdf_icon

SGT25T120FD1P7

SGT25U120FD1P7 25A1200V C2SGT25U120FD1P7 4 1PlusField Stop IV+G UPSSMPS PFC 3E 25A1200VVCE(sat)( )=2.2V@IC=25A

Datasheet: SGM50HF12A1TFDT4 , SGM50PA12A6BTFD , SGM75HF12A1TFD , SGM75HF12A1TFD1 , SGM75HF12A1TFDT4 , SGM75HF12A1TLD , SGT15T60QD1F , SGT20T60SDM1P7 , SGT50T65FD1PT , SGT25U120FD1P7 , SGT40N60FD2PN , SGT40N60FD2P7 , SGT40N60NPFDPN , SGT50T65FD1PN , SGT50T65FD1P7 , SGT50T65FD1PS , SGT50T65FD1PT .

Keywords - SGT25T120FD1P7 transistor datasheet

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