SGT25T120FD1P7 PDF and Equivalents Search

 

SGT25T120FD1P7 PDF Specs and Replacement


   Type Designator: SGT25T120FD1P7
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.25 V @25℃
   tr ⓘ - Rise Time, typ: 63 nS
   Coesⓘ - Output Capacitance, typ: 128 pF
   Package: TO247
 

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SGT25T120FD1P7 PDF specs

 ..1. Size:323K  silan
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SGT25T120FD1P7

SGT25T120FD1P7 25A 1200V SGT25T120FD1P7 Trench Field Stop UPS SMPS PFC 25A 1200V VCE(sat)( )=2.25V@... See More ⇒

 9.1. Size:664K  silan
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SGT25T120FD1P7

SGT25U120FD1P7 25A 1200V C 2 SGT25U120FD1P7 4 1 Plus Field Stop IV+ G UPS SMPS PFC 3 E 25A 1200V VCE(sat)( )=2.2V@IC=25A ... See More ⇒

Specs: SGM50HF12A1TFDT4 , SGM50PA12A6BTFD , SGM75HF12A1TFD , SGM75HF12A1TFD1 , SGM75HF12A1TFDT4 , SGM75HF12A1TLD , SGT15T60QD1F , SGT20T60SDM1P7 , IXGH60N60 , SGT25U120FD1P7 , SGT40N60FD2PN , SGT40N60FD2P7 , SGT40N60NPFDPN , SGT50T65FD1PN , SGT50T65FD1P7 , SGT50T65FD1PS , SGT50T65FD1PT .

Keywords - SGT25T120FD1P7 transistor spec

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