SGT25T120FD1P7 IGBT. Datasheet pdf. Equivalent

   Type Designator: SGT25T120FD1P7
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 25T120FD1
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 400
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.25
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 63
   Collector Capacity (Cc), typ, pF: 128
   Total Gate Charge (Qg), typ, nC: 120
   Package: TO247

SGT25T120FD1P7 Transistor Equivalent Substitute - IGBT Cross-Reference Search