SGT50T65FD1P7 PDF and Equivalents Search

 

SGT50T65FD1P7 PDF Specs and Replacement


   Type Designator: SGT50T65FD1P7
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 235 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   tr ⓘ - Rise Time, typ: 145 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Package: TO247
 

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SGT50T65FD1P7 PDF specs

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SGT50T65FD1P7

SGT50T65FD1PN/P7 50A 650V C 2 SGT50T65FD1PN/P7 1 Field Stop IV G UPS,SMPS PFC 3 E 50A 650V VCE(sat)( )=2.0... See More ⇒

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SGT50T65FD1P7

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SGT50T65FD1P7

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 sgt50t65sdm1p7.pdf pdf_icon

SGT50T65FD1P7

SGT50T65SDM1P7 50A 650V C 2 SGT50T65SDM1P7 1 Field Stop III G UPS SMPS PFC 3 E 50A 650V VCE(sat)( )=1.65V@IC=50A ... See More ⇒

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Specs: SGT15T60QD1F , SGT20T60SDM1P7 , SGT25T120FD1P7 , SGT25U120FD1P7 , SGT40N60FD2PN , SGT40N60FD2P7 , SGT40N60NPFDPN , SGT50T65FD1PN , SGT40N60NPFDPN , SGT50T65FD1PS , SGT50T65FD1PT , SGTP5T60SD1D , SGTP5T60SD1F , SGTP5T60SD1S , AU40N120T3A2 , LGM100HF120S2F1A , LGM400HF65S4T1A .

Keywords - SGT50T65FD1P7 transistor spec

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