All IGBT. AU40N120T3A2 Datasheet

 

AU40N120T3A2 Datasheet and Replacement


   Type Designator: AU40N120T3A2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 190 pF
   Qgⓘ - Total Gate Charge, typ: 260 nC
   Package: TO247
      - IGBT Cross-Reference

 

AU40N120T3A2 Datasheet (PDF)

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AU40N120T3A2

AU40N120T3A2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10s Low V CE(SAT) Easy paral

Datasheet: SGT40N60NPFDPN , SGT50T65FD1PN , SGT50T65FD1P7 , SGT50T65FD1PS , SGT50T65FD1PT , SGTP5T60SD1D , SGTP5T60SD1F , SGTP5T60SD1S , IRG7IC28U , LGM100HF120S2F1A , LGM400HF65S4T1A , YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 .

History: STGWT60H60DLFB | HMG60N60A | SME6G5US120

Keywords - AU40N120T3A2 transistor datasheet

 AU40N120T3A2 cross reference
 AU40N120T3A2 equivalent finder
 AU40N120T3A2 lookup
 AU40N120T3A2 substitution
 AU40N120T3A2 replacement

 

 
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