AU40N120T3A2 Datasheet. Specs and Replacement
Type Designator: AU40N120T3A2 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 416 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 190 pF
Package: TO247
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AU40N120T3A2 datasheet
au40n120t3a2.pdf
AU40N120T3A2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10 s Low V CE(SAT) Easy paral... See More ⇒
Specs: SGT40N60NPFDPN, SGT50T65FD1PN, SGT50T65FD1P7, SGT50T65FD1PS, SGT50T65FD1PT, SGTP5T60SD1D, SGTP5T60SD1F, SGTP5T60SD1S, IKW75N60T, LGM100HF120S2F1A, LGM400HF65S4T1A, YGF15N65T2, YGK15N65T2, YGP15N65T2, YGF20N65T2, YGK20N65T2, YGP20N65T2
Keywords - AU40N120T3A2 transistor spec
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History: LGM400HF65S4T1A
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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