All IGBT. AU40N120T3A2 Datasheet

 

AU40N120T3A2 IGBT. Datasheet pdf. Equivalent


   Type Designator: AU40N120T3A2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 416
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 50
   Collector Capacity (Cc), typ, pF: 190
   Total Gate Charge (Qg), typ, nC: 260
   Package: TO247

 AU40N120T3A2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AU40N120T3A2 Datasheet (PDF)

 ..1. Size:429K  cn luxin semi
 au40n120t3a2.pdf

AU40N120T3A2 AU40N120T3A2

AU40N120T3A2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10s Low V CE(SAT) Easy paral

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top