LGM100HF120S2F1A Datasheet. Specs and Replacement

Type Designator: LGM100HF120S2F1A  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 577 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100(100C) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 120 nS

Package: MODULE

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LGM100HF120S2F1A datasheet

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LGM100HF120S2F1A

LGM100HF120S2F1A 1200V/100A 2 in one-package Preliminary Data FEATURES VCES = 1200V IC nom = 100A / ICRM = 200A V with positive temperature coefficient CEsat Low switching losses Low inductance case Isolated copper baseplate using DBC technology APPLICATION Welding Machine Switching Mode Power Supplies Equivalent Circuit Schematic IGBT, Inve... See More ⇒

Specs: SGT50T65FD1PN, SGT50T65FD1P7, SGT50T65FD1PS, SGT50T65FD1PT, SGTP5T60SD1D, SGTP5T60SD1F, SGTP5T60SD1S, AU40N120T3A2, RJP30E2DPP-M0, LGM400HF65S4T1A, YGF15N65T2, YGK15N65T2, YGP15N65T2, YGF20N65T2, YGK20N65T2, YGP20N65T2, YGW20N65T2

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