All IGBT. LGM100HF120S2F1A Datasheet

 

LGM100HF120S2F1A IGBT. Datasheet pdf. Equivalent


   Type Designator: LGM100HF120S2F1A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 577
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 100(100C)
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7(typ)
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 120
   Total Gate Charge (Qg), typ, nC: 700
   Package: MODULE

 LGM100HF120S2F1A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

LGM100HF120S2F1A Datasheet (PDF)

 0.1. Size:444K  cn luxin semi
 lgm100hf120s2f1a.pdf

LGM100HF120S2F1A LGM100HF120S2F1A

LGM100HF120S2F1A 1200V/100A 2 in one-package Preliminary Data FEATURES VCES = 1200V IC nom = 100A / ICRM = 200A V with positive temperature coefficient CEsat Low switching losses Low inductance case Isolated copper baseplate using DBC technology APPLICATION Welding Machine Switching Mode Power Supplies Equivalent Circuit Schematic IGBT, Inve

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top