All IGBT. LGM100HF120S2F1A Datasheet

 

LGM100HF120S2F1A Datasheet and Replacement


   Type Designator: LGM100HF120S2F1A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 577 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100(100C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7(typ) V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 120 nS
   Qg ⓘ - Total Gate Charge, typ: 700 nC
   Package: MODULE
 

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LGM100HF120S2F1A Datasheet (PDF)

 0.1. Size:444K  cn luxin semi
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LGM100HF120S2F1A

LGM100HF120S2F1A 1200V/100A 2 in one-package Preliminary Data FEATURES VCES = 1200V IC nom = 100A / ICRM = 200A V with positive temperature coefficient CEsat Low switching losses Low inductance case Isolated copper baseplate using DBC technology APPLICATION Welding Machine Switching Mode Power Supplies Equivalent Circuit Schematic IGBT, Inve

Datasheet: SGT50T65FD1PN , SGT50T65FD1P7 , SGT50T65FD1PS , SGT50T65FD1PT , SGTP5T60SD1D , SGTP5T60SD1F , SGTP5T60SD1S , AU40N120T3A2 , RJP63F3DPP-M0 , LGM400HF65S4T1A , YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 .

History: IRG7SC28U | IRG6S330U | IRGB15B60KD

Keywords - LGM100HF120S2F1A transistor datasheet

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