LGM400HF65S4T1A IGBT. Datasheet pdf. Equivalent
Type Designator: LGM400HF65S4T1A
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 1154
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 400(70C)
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.8(typ)
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 350
Total Gate Charge (Qg), typ, nC: 4200
Package: MODULE
LGM400HF65S4T1A Transistor Equivalent Substitute - IGBT Cross-Reference Search
LGM400HF65S4T1A Datasheet (PDF)
lgm400hf65s4t1a.pdf
LGM400HF65S4T1A 650V/400A 2 in one-package FEATURES Preliminary Data V with positive temperature coefficient CEsatVCES = 650V IC nom = 400A / ICRM = 800A Low Vcesat Low switching losses Low inductance case Isolated copper baseplate using DBC technology APPLICATION Welding Machine UPS Motor Drives Equivalent Circuit Schematic htt
Datasheet: SGT50T65FD1P7 , SGT50T65FD1PS , SGT50T65FD1PT , SGTP5T60SD1D , SGTP5T60SD1F , SGTP5T60SD1S , AU40N120T3A2 , LGM100HF120S2F1A , CRG60T60AN3H , YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , YGQ100N65FP .
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