LGM400HF65S4T1A Datasheet and Replacement
Type Designator: LGM400HF65S4T1A
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1154 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 400(70C) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 350 nS
Package: MODULE
- IGBT Cross-Reference
LGM400HF65S4T1A Datasheet (PDF)
lgm400hf65s4t1a.pdf

LGM400HF65S4T1A 650V/400A 2 in one-package FEATURES Preliminary Data V with positive temperature coefficient CEsatVCES = 650V IC nom = 400A / ICRM = 800A Low Vcesat Low switching losses Low inductance case Isolated copper baseplate using DBC technology APPLICATION Welding Machine UPS Motor Drives Equivalent Circuit Schematic htt
Datasheet: SGT50T65FD1P7 , SGT50T65FD1PS , SGT50T65FD1PT , SGTP5T60SD1D , SGTP5T60SD1F , SGTP5T60SD1S , AU40N120T3A2 , LGM100HF120S2F1A , GT30G124 , YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , YGQ100N65FP .
History: SGM75HF12A1TLD | STGWT60H60DLFB | AU40N120T3A2 | HMG60N60A | SGTP5T60SD1S | IXGY2N120 | SME6G5US120
Keywords - LGM400HF65S4T1A transistor datasheet
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LGM400HF65S4T1A replacement
History: SGM75HF12A1TLD | STGWT60H60DLFB | AU40N120T3A2 | HMG60N60A | SGTP5T60SD1S | IXGY2N120 | SME6G5US120



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