All IGBT. YGP15N65T2 Datasheet

 

YGP15N65T2 Datasheet and Replacement


   Type Designator: YGP15N65T2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Qgⓘ - Total Gate Charge, typ: 45 nC
   Package: TO220
      - IGBT Cross-Reference

 

YGP15N65T2 Datasheet (PDF)

 ..1. Size:522K  cn luxin semi
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YGP15N65T2

YGF15N65T2 YGK15N65T2 YGP15N65T2 650V /15A Trench Field Stop IGBT Features Max Junction Temperature 175C V 650 V CE High breakdown voltage up to 650V for improved reliability I 15 A C Short Circuit Rated V I =15A 1.50 V CE(SAT) C Very Low Saturation Voltage: V = 1.50V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: SGT40N60FD2P7 | OST15N65PRF | OST80N65HEWF | SGM50HF12A1TFD | TA49115 | SG40T120DB | STGWA60H65DFB

Keywords - YGP15N65T2 transistor datasheet

 YGP15N65T2 cross reference
 YGP15N65T2 equivalent finder
 YGP15N65T2 lookup
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