YGF20N65T2 IGBT. Datasheet pdf. Equivalent
Type Designator: YGF20N65T2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 30.6
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 40
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 40
Collector Capacity (Cc), typ, pF: 50
Total Gate Charge (Qg), typ, nC: 45
Package: TO220F
YGF20N65T2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
YGF20N65T2 Datasheet (PDF)
ygf20n65t2 ygk20n65t2 ygp20n65t2 ygw20n65t2.pdf
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YGF20N65T2,YGK20N65T2YGP20N65T2,YGW20N65T2 650V /20A Trench Field Stop IGBT Features Max Junction Temperature 175C V 650 V CE High breakdown voltage up to 650V for improved reliability I 20 A C Short Circuit Rated V I =20A 1.65 V CE(SAT) C Very Low Saturation Voltage: V = 1.65V (Typ.) @ I = 20A CE(SAT) C Soft current turn-off waveforms App
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
![YGF20N65T2](https://alltransistors.com/images/us.png)
![YGF20N65T2](https://alltransistors.com/images/es.png)
![YGF20N65T2](https://alltransistors.com/images/ru.png)
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