All IGBT. YGF20N65T2 Datasheet

 

YGF20N65T2 Datasheet and Replacement


   Type Designator: YGF20N65T2
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 30.6 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Package: TO220F
 

 YGF20N65T2 substitution

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YGF20N65T2 Datasheet (PDF)

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YGF20N65T2

YGF20N65T2,YGK20N65T2YGP20N65T2,YGW20N65T2 650V /20A Trench Field Stop IGBT Features Max Junction Temperature 175C V 650 V CE High breakdown voltage up to 650V for improved reliability I 20 A C Short Circuit Rated V I =20A 1.65 V CE(SAT) C Very Low Saturation Voltage: V = 1.65V (Typ.) @ I = 20A CE(SAT) C Soft current turn-off waveforms App

Datasheet: SGTP5T60SD1F , SGTP5T60SD1S , AU40N120T3A2 , LGM100HF120S2F1A , LGM400HF65S4T1A , YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , RJH30E2DPP , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , YGQ100N65FP , YGW10N120T3 , YGW15N120F1A , YGW15N120T3 , YGW25N120F1A1 .

Keywords - YGF20N65T2 transistor datasheet

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