YGF20N65T2 Datasheet. Specs and Replacement

Type Designator: YGF20N65T2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30.6 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 50 pF

Package: TO220F

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YGF20N65T2 datasheet

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YGF20N65T2

YGF20N65T2,YGK20N65T2 YGP20N65T2,YGW20N65T2 650V /20A Trench Field Stop IGBT Features Max Junction Temperature 175 C V 650 V CE High breakdown voltage up to 650V for improved reliability I 20 A C Short Circuit Rated V I =20A 1.65 V CE(SAT) C Very Low Saturation Voltage V = 1.65V (Typ.) @ I = 20A CE(SAT) C Soft current turn-off waveforms App... See More ⇒

Specs: SGTP5T60SD1F, SGTP5T60SD1S, AU40N120T3A2, LGM100HF120S2F1A, LGM400HF65S4T1A, YGF15N65T2, YGK15N65T2, YGP15N65T2, IKW75N60T, YGK20N65T2, YGP20N65T2, YGW20N65T2, YGQ100N65FP, YGW10N120T3, YGW15N120F1A, YGW15N120T3, YGW25N120F1A1

Keywords - YGF20N65T2 transistor spec

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