YGF20N65T2 Datasheet and Replacement
Type Designator: YGF20N65T2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 30.6 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Qg ⓘ - Total Gate Charge, typ: 45 nC
Package: TO220F
YGF20N65T2 substitution
YGF20N65T2 Datasheet (PDF)
ygf20n65t2 ygk20n65t2 ygp20n65t2 ygw20n65t2.pdf

YGF20N65T2,YGK20N65T2YGP20N65T2,YGW20N65T2 650V /20A Trench Field Stop IGBT Features Max Junction Temperature 175C V 650 V CE High breakdown voltage up to 650V for improved reliability I 20 A C Short Circuit Rated V I =20A 1.65 V CE(SAT) C Very Low Saturation Voltage: V = 1.65V (Typ.) @ I = 20A CE(SAT) C Soft current turn-off waveforms App
Datasheet: SGTP5T60SD1F , SGTP5T60SD1S , AU40N120T3A2 , LGM100HF120S2F1A , LGM400HF65S4T1A , YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , RJH30E2DPP , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , YGQ100N65FP , YGW10N120T3 , YGW15N120F1A , YGW15N120T3 , YGW25N120F1A1 .
History: VS-GA100TS60SFPBF | IKB30N65ES5 | 2M410B1 | TA49017 | IXSH30N60 | MMG50HD120XT6TC | BLG40T65FUL-K
Keywords - YGF20N65T2 transistor datasheet
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History: VS-GA100TS60SFPBF | IKB30N65ES5 | 2M410B1 | TA49017 | IXSH30N60 | MMG50HD120XT6TC | BLG40T65FUL-K



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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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