IXSM25N100 Datasheet. Specs and Replacement

Type Designator: IXSM25N100  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5(max) V @25℃

tr ⓘ - Rise Time, typ: 580 nS

Coesⓘ - Output Capacitance, typ: 210 pF

Package: TO204

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IXSM25N100 datasheet

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IXSM25N100

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Specs: IXGA7N60B, IXGA7N60C, IXGA8N100, IXGH32N60AU1S, IXGH40N30AS, IXGH40N30BS, IXGH50N60AS, IXGT32N60B, BT60T60ANFK, IXSM25N100A, IXGH10N100U1, IXGH10N100, IXGH10N100A, IXGH10N100AU1, IXGH12N100, IXGH12N100A, IXGH12N100AU1

Keywords - IXSM25N100 transistor spec

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