IXSM25N100 Datasheet and Replacement

   Type Designator: IXSM25N100
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 580 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Qg ⓘ - Total Gate Charge, typ: 112 nC
   Package: TO204
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