YGQ100N65FP PDF and Equivalents Search

 

YGQ100N65FP Specs and Replacement

Type Designator: YGQ100N65FP

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃

tr ⓘ - Rise Time, typ: 130 nS

Coesⓘ - Output Capacitance, typ: 370 pF

Package: TO247-PLUS

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YGQ100N65FP datasheet

 ..1. Size:572K  cn luxin semi
 ygq100n65fp.pdf pdf_icon

YGQ100N65FP

YGQ100N65FP 650V /100A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 100 A C improved reliability V I =100A 1.75 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 5 s Low V CEsat Easy parallel switching capabili... See More ⇒

Specs: LGM400HF65S4T1A , YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , MBQ50T65FDSC , YGW10N120T3 , YGW15N120F1A , YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 .

History: VS-GB150LH120N | YGW50N65F1A | STGWA40H65FB | SIGC03T60SNC | STGW50HF60SD | TT025N120EQ

Keywords - YGQ100N65FP transistor spec

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