All IGBT. YGQ100N65FP Datasheet

 

YGQ100N65FP IGBT. Datasheet pdf. Equivalent


   Type Designator: YGQ100N65FP
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 500
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 200
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 130
   Collector Capacity (Cc), typ, pF: 370
   Total Gate Charge (Qg), typ, nC: 135
   Package: TO247-PLUS

 YGQ100N65FP Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

YGQ100N65FP Datasheet (PDF)

 ..1. Size:572K  cn luxin semi
 ygq100n65fp.pdf

YGQ100N65FP YGQ100N65FP

YGQ100N65FP 650V /100A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 100 A C improved reliability V I =100A 1.75 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capabili

Datasheet: LGM400HF65S4T1A , YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , FGH60N60SFD , YGW10N120T3 , YGW15N120F1A , YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 .

 

 
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