All IGBT. YGQ100N65FP Datasheet

 

YGQ100N65FP Datasheet and Replacement


   Type Designator: YGQ100N65FP
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 130 nS
   Coesⓘ - Output Capacitance, typ: 370 pF
   Package: TO247-PLUS
 

 YGQ100N65FP substitution

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YGQ100N65FP Datasheet (PDF)

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YGQ100N65FP

YGQ100N65FP 650V /100A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 100 A C improved reliability V I =100A 1.75 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capabili

Datasheet: LGM400HF65S4T1A , YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , IHW20N120R3 , YGW10N120T3 , YGW15N120F1A , YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 .

Keywords - YGQ100N65FP transistor datasheet

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