All IGBT. YGQ100N65FP Datasheet

 

YGQ100N65FP Datasheet and Replacement


   Type Designator: YGQ100N65FP
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 130 nS
   Coesⓘ - Output Capacitance, typ: 370 pF
   Qg ⓘ - Total Gate Charge, typ: 135 nC
   Package: TO247-PLUS
 

 YGQ100N65FP substitution

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YGQ100N65FP Datasheet (PDF)

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YGQ100N65FP

YGQ100N65FP 650V /100A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 100 A C improved reliability V I =100A 1.75 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capabili

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: APTGT25DA120D1 | VII130-06P1 | SRE60N065FSU | MIXD600PF650TSF | IGC189T120T6RL | SIGC04T60GSE | XD075H065CX1S3

Keywords - YGQ100N65FP transistor datasheet

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