NCE40TD60BP PDF and Equivalents Search

 

NCE40TD60BP Specs and Replacement

Type Designator: NCE40TD60BP

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 286 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 136 pF

Package: TO3P

 NCE40TD60BP Substitution

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NCE40TD60BP datasheet

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NCE40TD60BP

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NCE40TD60BP

PbFreeProduct NCE40TD60BP,NCE40TD60BT 600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H... See More ⇒

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NCE40TD60BP

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NCE40TD60BP

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Specs: NCE30TD60BD, NCE30TD60BP, NCE30TD60BT, NCE30TH60BP, NCE40TD120BT, NCE40TD120VT, NCE40TD120VTP, NCE40TD120WT, IXRH40N120, NCE40TD60BT, NCE40TD65BT, NCE40TH60BP, NCE40TS120VTP, NCE60TD60BP, NCE60TD60BT, NCE75TD120VTP, NCE75TS120VTP

Keywords - NCE40TD60BP transistor spec

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