STGB5H60DF PDF and Equivalents Search

 

STGB5H60DF Specs and Replacement

Type Designator: STGB5H60DF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 88 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 10 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 10.8 nS

Coesⓘ - Output Capacitance, typ: 34 pF

Package: D2PAK

 STGB5H60DF Substitution

- IGBTⓘ Cross-Reference Search

 

STGB5H60DF datasheet

 ..1. Size:862K  st
 stgb5h60df stgd5h60df stgf5h60df stgp5h60df.pdf pdf_icon

STGB5H60DF

STGB5H60DF, STGD5H60DF STGF5H60DF, STGP5H60DF Datasheet Trench gate field-stop 600 V, 5 A high speed H series IGBT Features TAB TAB High-speed switching 3 2 3 1 1 DPAK 2 Tight parameter distribution D PAK Safe paralleling TAB Low thermal resistance Short-circuit rated 3 2 3 1 Ultrafast soft recovery antiparallel diode 2 1 TO-220 TO-220FP Appl... See More ⇒

Specs: STGB20M65DF2, STGB30H60DFB, STGP30H60DFB, STGB3HF60HD, STGD3HF60HDT4, STGF3HF60HD, STGP3HF60HD, STGB40H65FB, GT30J127, STGD5H60DF, STGF5H60DF, STGP5H60DF, STGB6NC60HDT4, STGD4M65DF2, STGD6M65DF2, STGD7NC60HT4, STGF15M65DF2

Keywords - STGB5H60DF transistor spec

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