STGB5H60DF Datasheet and Replacement
Type Designator: STGB5H60DF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 88 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 10.8 nS
Coesⓘ - Output Capacitance, typ: 34 pF
Package: D2PAK
- IGBT Cross-Reference
STGB5H60DF Datasheet (PDF)
stgb5h60df stgd5h60df stgf5h60df stgp5h60df.pdf
STGB5H60DF, STGD5H60DF STGF5H60DF, STGP5H60DFDatasheetTrench gate field-stop 600 V, 5 A high speed H series IGBTFeaturesTABTAB High-speed switching32311DPAK2 Tight parameter distributionD PAK Safe parallelingTAB Low thermal resistance Short-circuit rated3231 Ultrafast soft recovery antiparallel diode21TO-220TO-220FPAppl
Datasheet: STGB20M65DF2 , STGB30H60DFB , STGP30H60DFB , STGB3HF60HD , STGD3HF60HDT4 , STGF3HF60HD , STGP3HF60HD , STGB40H65FB , SGT40N60NPFDPN , STGD5H60DF , STGF5H60DF , STGP5H60DF , STGB6NC60HDT4 , STGD4M65DF2 , STGD6M65DF2 , STGD7NC60HT4 , STGF15M65DF2 .
History: CM100RL-12NF | IXST35N120B | SGM100HF12A1TFDT4 | MSG100D350FHS | IXGH25N100 | MSG20T65HPT1 | MSG40T120FQC
Keywords - STGB5H60DF transistor datasheet
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History: CM100RL-12NF | IXST35N120B | SGM100HF12A1TFDT4 | MSG100D350FHS | IXGH25N100 | MSG20T65HPT1 | MSG40T120FQC
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