All IGBT. STGD4M65DF2 Datasheet

 

STGD4M65DF2 Datasheet and Replacement


   Type Designator: STGD4M65DF2
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 68 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 8 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 6.9 nS
   Coesⓘ - Output Capacitance, typ: 24.8 pF
   Package: DPAK
 

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STGD4M65DF2 Datasheet (PDF)

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STGD4M65DF2

STGD4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data Features 6 s of short-circuit withstand time V = 1.6 V (typ.) @ I = 4 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control Figure 1: Internal

Datasheet: STGF3HF60HD , STGP3HF60HD , STGB40H65FB , STGB5H60DF , STGD5H60DF , STGF5H60DF , STGP5H60DF , STGB6NC60HDT4 , RJP30H1DPD , STGD6M65DF2 , STGD7NC60HT4 , STGF15M65DF2 , STGF20M65DF2 , STGF30M65DF2 , STGWA40H65FB , STGP10M65DF2 , STGP20M65DF2 .

History: IXGT28N120BD1

Keywords - STGD4M65DF2 transistor datasheet

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