STGD4M65DF2 PDF and Equivalents Search

 

STGD4M65DF2 Specs and Replacement

Type Designator: STGD4M65DF2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 68 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 8 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 6.9 nS

Coesⓘ - Output Capacitance, typ: 24.8 pF

Package: DPAK

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STGD4M65DF2 datasheet

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 stgd4m65df2.pdf pdf_icon

STGD4M65DF2

STGD4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data Features 6 s of short-circuit withstand time V = 1.6 V (typ.) @ I = 4 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control Figure 1 Internal... See More ⇒

Specs: STGF3HF60HD , STGP3HF60HD , STGB40H65FB , STGB5H60DF , STGD5H60DF , STGF5H60DF , STGP5H60DF , STGB6NC60HDT4 , SGT40N60NPFDPN , STGD6M65DF2 , STGD7NC60HT4 , STGF15M65DF2 , STGF20M65DF2 , STGF30M65DF2 , STGWA40H65FB , STGP10M65DF2 , STGP20M65DF2 .

History: KGF20N60PA | IXSX40N60BD1 | GT50J325

Keywords - STGD4M65DF2 transistor spec

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