All IGBT. STGD4M65DF2 Datasheet

 

STGD4M65DF2 Datasheet and Replacement


   Type Designator: STGD4M65DF2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 68 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 8 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 6.9 nS
   Coesⓘ - Output Capacitance, typ: 24.8 pF
   Package: DPAK
      - IGBT Cross-Reference

 

STGD4M65DF2 Datasheet (PDF)

 ..1. Size:1085K  st
 stgd4m65df2.pdf pdf_icon

STGD4M65DF2

STGD4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data Features 6 s of short-circuit withstand time V = 1.6 V (typ.) @ I = 4 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control Figure 1: Internal

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MMG50SR120DE | MITB10WB1200TMH | SKM150GB12VG | IRGB4640D | STGBL6NC60DI | MMIX4B22N300 | 7MBP100VDA060-50

Keywords - STGD4M65DF2 transistor datasheet

 STGD4M65DF2 cross reference
 STGD4M65DF2 equivalent finder
 STGD4M65DF2 lookup
 STGD4M65DF2 substitution
 STGD4M65DF2 replacement

 

 
Back to Top

 


 
.