All IGBT. STGD4M65DF2 Datasheet

 

STGD4M65DF2 IGBT. Datasheet pdf. Equivalent


   Type Designator: STGD4M65DF2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G4M65DF2
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 68
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 8
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 6.9
   Collector Capacity (Cc), typ, pF: 24.8
   Total Gate Charge (Qg), typ, nC: 15.2
   Package: DPAK

 STGD4M65DF2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGD4M65DF2 Datasheet (PDF)

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 stgd4m65df2.pdf

STGD4M65DF2 STGD4M65DF2

STGD4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data Features 6 s of short-circuit withstand time V = 1.6 V (typ.) @ I = 4 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control Figure 1: Internal

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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