STGD6M65DF2 IGBT. Datasheet pdf. Equivalent

   Type Designator: STGD6M65DF2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G6M65DF2
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 88
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 12
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 5.8
   Collector Capacity (Cc), typ, pF: 31
   Total Gate Charge (Qg), typ, nC: 21.2
   Package: DPAK

STGD6M65DF2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

STGD6M65DF2 Datasheet (PDF)

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stgd6m65df2.pdf

STGD6M65DF2 Trench gate field-stop IGBT, M series 650 V, 6 A low loss Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 6 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control Figure 1: Interna

9.1. Size:370K st
stgd6nc60h-1.pdf