STGD6M65DF2 IGBT. Datasheet pdf. Equivalent

   Type Designator: STGD6M65DF2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G6M65DF2
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 88 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 5.8 nS
   Coesⓘ - Output Capacitance, typ: 31 pF
   Qgⓘ - Total Gate Charge, typ: 21.2 nC
   Package: DPAK

STGD6M65DF2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

STGD6M65DF2 Datasheet (PDF)

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stgd6m65df2.pdf

STGD6M65DF2 Trench gate field-stop IGBT, M series 650 V, 6 A low loss Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 6 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control Figure 1: Interna

9.1. Size:370K st
stgd6nc60h-1.pdf