STGD6M65DF2 Datasheet and Replacement
Type Designator: STGD6M65DF2
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 88 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 12 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 5.8 nS
Coesⓘ - Output Capacitance, typ: 31 pF
Package: DPAK
- IGBT Cross-Reference
STGD6M65DF2 Datasheet (PDF)
stgd6m65df2.pdf
STGD6M65DF2 Trench gate field-stop IGBT, M series 650 V, 6 A low loss Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 6 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control Figure 1: Interna
stgd6nc60h-1.pdf
STGD6NC60H-1N-channel 600 V, 7 A - IPAK Very fast PowerMESH IGBTDatasheet - production dataFeaturesICVCE(sat) TABType VCESmax@25C@100CSTGD6NC60H 600V
stgd6nc60h.pdf
STGD6NC60HN-channel 600V - 7A - DPAKVery fast PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGD6NC60H 600V
stgd6nc60hd.pdf
STGD6NC60HDN-channel 600V - 7A - DPAKVery fast PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGD6NC60HD 600V
Datasheet: STGP3HF60HD , STGB40H65FB , STGB5H60DF , STGD5H60DF , STGF5H60DF , STGP5H60DF , STGB6NC60HDT4 , STGD4M65DF2 , BT40T60ANF , STGD7NC60HT4 , STGF15M65DF2 , STGF20M65DF2 , STGF30M65DF2 , STGWA40H65FB , STGP10M65DF2 , STGP20M65DF2 , STGP30M65DF2 .
History: IRG4BC20F | IXST35N120B | NGTB30N120FL2 | MSG100D350FHS | NCE50ED65VT | MSG20T65HPT1 | MSG40T120FQC
Keywords - STGD6M65DF2 transistor datasheet
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History: IRG4BC20F | IXST35N120B | NGTB30N120FL2 | MSG100D350FHS | NCE50ED65VT | MSG20T65HPT1 | MSG40T120FQC
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