All IGBT. STGW75H65DFB2-4 Datasheet

 

STGW75H65DFB2-4 IGBT. Datasheet pdf. Equivalent


   Type Designator: STGW75H65DFB2-4
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G75H65DFB2
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 357
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 115
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 26
   Collector Capacity (Cc), typ, pF: 264
   Total Gate Charge (Qg), typ, nC: 207
   Package: TO247-4

 STGW75H65DFB2-4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGW75H65DFB2-4 Datasheet (PDF)

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 stgw75h65dfb2-4.pdf

STGW75H65DFB2-4 STGW75H65DFB2-4

STGW75H65DFB2-4DatasheetTrench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A Very fast and soft recovery co-packaged diode Minimized tail current43 Tight parameter distribution21 Low thermal resistanceTO247-4 Positive VCE

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 stgw75m65df2 stgwa75m65df2.pdf

STGW75H65DFB2-4 STGW75H65DFB2-4

STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of short-circuit withstand time V = 1.65 V (typ.) @ I = 75 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resi

Datasheet: STGP20M65DF2 , STGP30M65DF2 , STGW100H65FB2-4 , STGW10M65DF2 , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF , FGH60N60SFD , STGW75M65DF2 , STGWA75M65DF2 , STGWA100H65DFB2 , STGWA20H65DFB2 , STGWA20HP65FB2 , STGWA20IH65DF , STGWA20M65DF2 , STGWA30IH65DF .

 

 
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