STGYA120M65DF2AG Specs and Replacement
Type Designator: STGYA120M65DF2AG
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 160 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 38 nS
Coesⓘ - Output Capacitance, typ: 610 pF
Package: MAX247 STGYA120M65DF2AG Substitution - IGBT ⓘ Cross-Reference Search
STGYA120M65DF2AG datasheet
stgya75h120df2.pdf
STGYA75H120DF2 Datasheet Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package Features Maximum junction temperature TJ = 175 C 5 s of short-circuit withstand time 3 2 VCE(sat) = 2.1 V (typ.) @ IC = 75 A TAB 1 Tight parameter distribution TAB Positive VCE(sat) temperature coefficient Low thermal resistance 1 2... See More ⇒
Specs: STGWA30IH65DF , STGWA40H65DFB , STGWA40H65DFB2 , STGWA40HP65FB2 , STGWA50HP65FB2 , STGWA50M65DF2 , STGWA75H65DFB2 , STGWT30HP65FB , YGW40N65F1 , STGYA75H120DF2 , AFGB30T65SQDN , AFGB40T65SQDN , AFGHL40T65SPD , AFGHL40T65SQ , AFGHL40T65SQD , AFGHL50T65SQ , AFGHL50T65SQD .
History: TSG25N120CN
Keywords - STGYA120M65DF2AG transistor spec
STGYA120M65DF2AG cross reference
STGYA120M65DF2AG equivalent finder
STGYA120M65DF2AG lookup
STGYA120M65DF2AG substitution
STGYA120M65DF2AG replacement
History: TSG25N120CN
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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