All IGBT. STGYA120M65DF2AG Datasheet

 

STGYA120M65DF2AG IGBT. Datasheet pdf. Equivalent


   Type Designator: STGYA120M65DF2AG
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G120M65DF2AG
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 625
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 160
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 38
   Collector Capacity (Cc), typ, pF: 610
   Total Gate Charge (Qg), typ, nC: 420
   Package: MAX247

 STGYA120M65DF2AG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGYA120M65DF2AG Datasheet (PDF)

 0.1. Size:546K  st
 stgya120m65df2ag.pdf

STGYA120M65DF2AG STGYA120M65DF2AG

STGYA120M65DF2AGDatasheetAutomotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads packageFeatures AEC-Q101 qualified 6 s of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance

 9.1. Size:2033K  st
 stgya75h120df2.pdf

STGYA120M65DF2AG STGYA120M65DF2AG

STGYA75H120DF2DatasheetTrench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads packageFeatures Maximum junction temperature: TJ = 175 C 5 s of short-circuit withstand time32 VCE(sat) = 2.1 V (typ.) @ IC = 75 ATAB1 Tight parameter distributionTAB Positive VCE(sat) temperature coefficient Low thermal resistance12

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top