All IGBT. STGYA120M65DF2AG Datasheet

 

STGYA120M65DF2AG IGBT. Datasheet pdf. Equivalent


   Type Designator: STGYA120M65DF2AG
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G120M65DF2AG
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 38 nS
   Coesⓘ - Output Capacitance, typ: 610 pF
   Qgⓘ - Total Gate Charge, typ: 420 nC
   Package: MAX247

 STGYA120M65DF2AG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGYA120M65DF2AG Datasheet (PDF)

 0.1. Size:546K  st
 stgya120m65df2ag.pdf

STGYA120M65DF2AG STGYA120M65DF2AG

STGYA120M65DF2AGDatasheetAutomotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads packageFeatures AEC-Q101 qualified 6 s of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance

 9.1. Size:2033K  st
 stgya75h120df2.pdf

STGYA120M65DF2AG STGYA120M65DF2AG

STGYA75H120DF2DatasheetTrench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads packageFeatures Maximum junction temperature: TJ = 175 C 5 s of short-circuit withstand time32 VCE(sat) = 2.1 V (typ.) @ IC = 75 ATAB1 Tight parameter distributionTAB Positive VCE(sat) temperature coefficient Low thermal resistance12

Datasheet: STGWA30IH65DF , STGWA40H65DFB , STGWA40H65DFB2 , STGWA40HP65FB2 , STGWA50HP65FB2 , STGWA50M65DF2 , STGWA75H65DFB2 , STGWT30HP65FB , SGT60N60FD1P7 , STGYA75H120DF2 , AFGB30T65SQDN , AFGB40T65SQDN , AFGHL40T65SPD , AFGHL40T65SQ , AFGHL40T65SQD , AFGHL50T65SQ , AFGHL50T65SQD .

 

 
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