All IGBT. STGYA75H120DF2 Datasheet

 

STGYA75H120DF2 IGBT. Datasheet pdf. Equivalent


   Type Designator: STGYA75H120DF2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G75H120DF2
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 750
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 150
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 34
   Collector Capacity (Cc), typ, pF: 420
   Total Gate Charge (Qg), typ, nC: 313
   Package: MAX247

 STGYA75H120DF2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGYA75H120DF2 Datasheet (PDF)

 ..1. Size:2033K  st
 stgya75h120df2.pdf

STGYA75H120DF2 STGYA75H120DF2

STGYA75H120DF2DatasheetTrench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads packageFeatures Maximum junction temperature: TJ = 175 C 5 s of short-circuit withstand time32 VCE(sat) = 2.1 V (typ.) @ IC = 75 ATAB1 Tight parameter distributionTAB Positive VCE(sat) temperature coefficient Low thermal resistance12

 9.1. Size:546K  st
 stgya120m65df2ag.pdf

STGYA75H120DF2 STGYA75H120DF2

STGYA120M65DF2AGDatasheetAutomotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads packageFeatures AEC-Q101 qualified 6 s of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance

Datasheet: STGWA40H65DFB , STGWA40H65DFB2 , STGWA40HP65FB2 , STGWA50HP65FB2 , STGWA50M65DF2 , STGWA75H65DFB2 , STGWT30HP65FB , STGYA120M65DF2AG , SGT15T60QD1F , AFGB30T65SQDN , AFGB40T65SQDN , AFGHL40T65SPD , AFGHL40T65SQ , AFGHL40T65SQD , AFGHL50T65SQ , AFGHL50T65SQD , AFGHL50T65SQDC .

 

 
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