All IGBT. STGYA75H120DF2 Datasheet

 

STGYA75H120DF2 IGBT. Datasheet pdf. Equivalent


   Type Designator: STGYA75H120DF2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G75H120DF2
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 750 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 34 nS
   Coesⓘ - Output Capacitance, typ: 420 pF
   Qgⓘ - Total Gate Charge, typ: 313 nC
   Package: MAX247

 STGYA75H120DF2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGYA75H120DF2 Datasheet (PDF)

 ..1. Size:2033K  st
 stgya75h120df2.pdf

STGYA75H120DF2 STGYA75H120DF2

STGYA75H120DF2DatasheetTrench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads packageFeatures Maximum junction temperature: TJ = 175 C 5 s of short-circuit withstand time32 VCE(sat) = 2.1 V (typ.) @ IC = 75 ATAB1 Tight parameter distributionTAB Positive VCE(sat) temperature coefficient Low thermal resistance12

 9.1. Size:546K  st
 stgya120m65df2ag.pdf

STGYA75H120DF2 STGYA75H120DF2

STGYA120M65DF2AGDatasheetAutomotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads packageFeatures AEC-Q101 qualified 6 s of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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