All IGBT. AFGB30T65SQDN Datasheet

 

AFGB30T65SQDN IGBT. Datasheet pdf. Equivalent


   Type Designator: AFGB30T65SQDN
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 220
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 60
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 16
   Collector Capacity (Cc), typ, pF: 44
   Total Gate Charge (Qg), typ, nC: 56
   Package: D2PAK

 AFGB30T65SQDN Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AFGB30T65SQDN Datasheet (PDF)

 ..1. Size:151K  onsemi
 afgb30t65sqdn.pdf

AFGB30T65SQDN AFGB30T65SQDN

AFGB30T65SQDNIGBT for AutomotiveApplications650 V, 30 A, D2PAKFeatureswww.onsemi.com Maximum Junction Temperature: TJ = 175C High Speed Switching SeriesBVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 QualifiedC 100% of the Parts are Dynamically Tested (Note 1)Typical

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top