All IGBT. FGAF30S65AQ Datasheet

 

FGAF30S65AQ IGBT. Datasheet pdf. Equivalent


   Type Designator: FGAF30S65AQ
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 83
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 60
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.4
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.6
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 6
   Collector Capacity (Cc), typ, pF: 29
   Total Gate Charge (Qg), typ, nC: 58
   Package: TO3PF

 FGAF30S65AQ Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGAF30S65AQ Datasheet (PDF)

 ..1. Size:294K  onsemi
 fgaf30s65aq.pdf

FGAF30S65AQ FGAF30S65AQ

Field Stop Trench IGBT, 30 A, 650 VFGAF30S65AQUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation of RC IGBTs offer the optimumperformance for PFC applications and welder where low conductionwww.onsemi.comand switching losses are essential.Features30 A, 650 V Maximum Junction Temperature: TJ = 175CVCE(sat) = 1.4 V (Typ.)

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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