All IGBT. FGAF30S65AQ Datasheet

 

FGAF30S65AQ Datasheet and Replacement


   Type Designator: FGAF30S65AQ
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 83 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 6 nS
   Coesⓘ - Output Capacitance, typ: 29 pF
   Qgⓘ - Total Gate Charge, typ: 58 nC
   Package: TO3PF
      - IGBT Cross-Reference

 

FGAF30S65AQ Datasheet (PDF)

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FGAF30S65AQ

Field Stop Trench IGBT, 30 A, 650 VFGAF30S65AQUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation of RC IGBTs offer the optimumperformance for PFC applications and welder where low conductionwww.onsemi.comand switching losses are essential.Features30 A, 650 V Maximum Junction Temperature: TJ = 175CVCE(sat) = 1.4 V (Typ.)

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