FGAF30S65AQ Specs and Replacement
Type Designator: FGAF30S65AQ
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 83 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
tr ⓘ - Rise Time, typ: 6 nS
Coesⓘ - Output Capacitance, typ: 29 pF
Package: TO3PF
FGAF30S65AQ Substitution - IGBTⓘ Cross-Reference Search
FGAF30S65AQ datasheet
fgaf30s65aq.pdf
Field Stop Trench IGBT, 30 A, 650 V FGAF30S65AQ Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction www.onsemi.com and switching losses are essential. Features 30 A, 650 V Maximum Junction Temperature TJ = 175 C VCE(sat) = 1.4 V (Typ.)... See More ⇒
Specs: FGA40S65SH, FGA40T65SHD, FGA40T65SHDF, FGA40T65UQDF, FGA5065ADF, FGA50S110P, FGA6530WDF, FGA6540WDF, GT60N321, FGAF40N60SMD, FGAF40S65AQ, FGB20N60SFD-F085, FGB3040CS, FGI3040G2-F085, FGB3040G2-F085, FGD3040G2-F085, FGP3040G2-F085
Keywords - FGAF30S65AQ transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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