FGB5N60UNDF Specs and Replacement
Type Designator: FGB5N60UNDF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 73.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 1.9 nS
Coesⓘ - Output Capacitance, typ: 28 pF
Package: D2PAK
FGB5N60UNDF Substitution - IGBTⓘ Cross-Reference Search
FGB5N60UNDF datasheet
fgb5n60undf.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Specs: FGP3040G2-F085, FGB3056-F085, FGB3236-F085, FGI3236-F085, FGB3440G2-F085, FGD3440G2-F085, FGP3440G2-F085, FGB40T65SPD-F085, IRGP4062D, FGB7N60UNDF, FGD2736G3-F085, FGD2736G3-F085V, FGD3040G2-F085C, FGB3040G2-F085C, FGD3040G2-F085V, FGD3050G2, FGD3050G2V
Keywords - FGB5N60UNDF transistor spec
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