All IGBT. FGB5N60UNDF Datasheet

 

FGB5N60UNDF IGBT. Datasheet pdf. Equivalent


   Type Designator: FGB5N60UNDF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 73.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 1.9 nS
   Coesⓘ - Output Capacitance, typ: 28 pF
   Qgⓘ - Total Gate Charge, typ: 12.1 nC
   Package: D2PAK

 FGB5N60UNDF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGB5N60UNDF Datasheet (PDF)

 ..1. Size:460K  onsemi
 fgb5n60undf.pdf

FGB5N60UNDF FGB5N60UNDF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top