2SH17 Datasheet and Replacement
Type Designator: 2SH17
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 12 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 75 nS
Package: TO220AB
- IGBT Cross-Reference
2SH17 Datasheet (PDF)
2sh17.pdf

ADE208290 (Z)2SH17Silicon N-Channel IGBT1st. EditionFeb. 1995ApplicationTO220ABHigh speed power switchingFeatures2 High speed switching Low on saturation voltage11. Gate12. Collector233. Emitter3Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
Datasheet: 2PG401 , 2PG402 , 2SH11 , 2SH12 , 2SH13 , 2SH14 , 2SH15 , 2SH16 , STGB10NB37LZ , 2SH18 , 2SH19 , 2SH20 , 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 .
History: MMG75J120U6HN | 2SH29
Keywords - 2SH17 transistor datasheet
2SH17 cross reference
2SH17 equivalent finder
2SH17 lookup
2SH17 substitution
2SH17 replacement
History: MMG75J120U6HN | 2SH29



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