FGD3325G2-F085 IGBT. Datasheet pdf. Equivalent
Type Designator: FGD3325G2-F085
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 250 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V
|Ic|ⓘ - Maximum Collector Current: 41 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.15 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 2.2 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 1200 nS
Qgⓘ - Total Gate Charge, typ: 21 nC
Package: DPAK
FGD3325G2-F085 Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGD3325G2-F085 Datasheet (PDF)
fgd3325g2-f085.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
Datasheet: FGB3040G2-F085C , FGD3040G2-F085V , FGD3050G2 , FGD3050G2V , FGD3245G2-F085 , FGB3245G2-F085 , FGD3245G2-F085C , FGD3245G2-F085V , MBQ60T65PES , FGD3440G2-F085V , FGD3N60UNDF , FGD5T120SH , FGH12040WD , FGH15T120SMD , FGH20N60SFDTU , FGH20N60SFDTU-F085 , FGH30S150P .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2