FGH15T120SMD Datasheet and Replacement
Type Designator: FGH15T120SMD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 333 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 47 nS
Coesⓘ - Output Capacitance, typ: 65 pF
Qg ⓘ - Total Gate Charge, typ: 128 nC
Package: TO247
FGH15T120SMD substitution
FGH15T120SMD Datasheet (PDF)
fgh15t120smd.pdf
FGH15T120SMD1200 V15 A IGBT IGBT IGBT UPS PFC FS VCE(sat) =1.8 V @ IC=15 A ILM(1) 100%
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: BSM25GD120DN2 | IXXH30N65B4 | AIKW75N60CT | 2MBI225U4N-170-50 | STGWA30H60DFB | IRG4BC30KD-S | 2MBI200VA-060-50
Keywords - FGH15T120SMD transistor datasheet
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History: BSM25GD120DN2 | IXXH30N65B4 | AIKW75N60CT | 2MBI225U4N-170-50 | STGWA30H60DFB | IRG4BC30KD-S | 2MBI200VA-060-50
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