FGH40T65SH IGBT. Datasheet pdf. Equivalent

   Type Designator: FGH40T65SH
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 268
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 34.4
   Collector Capacity (Cc), typ, pF: 70
   Total Gate Charge (Qg), typ, nC: 72.2
   Package: TO247

FGH40T65SH Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGH40T65SH Datasheet (PDF)

..1. Size:475K onsemi
fgh40t65sh.pdf

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplica-tions where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ

0.1. Size:915K 1
fgh40t65shdf.pdf

May 2014FGH40T65SHDF650 V, 40 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchilds new series offield stop 3rd generation IGBTs offer superior conduction and Positive Temperaure Co-efficient for Easy Parallel Operatingswitching performance and easy parallel operation. This device

0.2. Size:1508K onsemi
fgh40t65shd-f155.pdf