FGH40T65SH Spec and Replacement, IGBT Equivalent Finder, Cross Reference

FGH40T65SH Specs and Replacement

Type Designator: FGH40T65SH

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 268 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 34.4 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO247

FGH40T65SH Substitution

- IGBTⓘ Cross-Reference Search

FGH40T65SH datasheet

..1. Size:475K onsemi
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IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SH Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applica-tions where low conduction and switching losses are C essential. Features Maximum Junction Temperature TJ... See More ⇒

0.1. Size:498K 1
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IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer superior conduction www.onsemi.com and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as C induction heating and MWO. Features ... See More ⇒

0.2. Size:1508K onsemi
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