FGH40T65SH Datasheet and Replacement
Type Designator: FGH40T65SH
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 268 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 34.4 nS
Coesⓘ - Output Capacitance, typ: 70 pF
Package: TO247
- IGBT Cross-Reference
FGH40T65SH Datasheet (PDF)
fgh40t65sh.pdf

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplica-tions where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ
fgh40t65shdf.pdf

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer superior conductionwww.onsemi.comand switching performance and easy parallel operation. This deviceis well suited for the resonant or soft switching application such asCinduction heating and MWO.Features
Datasheet: FGH40N60SMD-F085 , FGH40N60SMDF-F085 , FGH40N65UFDTU , FGH40N65UFDTU-F085 , FGH40T100SMD , FGH40T120SMD-F155 , FGH40T120SMDL4 , FGH40T120SQDNL4 , FGA60N65SMD , FGH40T65SHDF , FGH40T65SHD-F155 , FGH40T65SPD-F085 , FGH40T65SQD , FGH40T65UPD , FGH40T65UQDF , FGH40T70SHD , FGH50T65UPD .
History: 1MBH10D-060 | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | MITA150H1700TEH | FF225R12ME4 | CRG05T60A44S-G
Keywords - FGH40T65SH transistor datasheet
FGH40T65SH cross reference
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History: 1MBH10D-060 | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | MITA150H1700TEH | FF225R12ME4 | CRG05T60A44S-G



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