All IGBT. FGY60T120SQDN Datasheet

 

FGY60T120SQDN IGBT. Datasheet pdf. Equivalent


   Type Designator: FGY60T120SQDN
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 517
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 25
   Maximum Collector Current |Ic| @25℃, A: 120
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 84
   Collector Capacity (Cc), typ, pF: 203
   Total Gate Charge (Qg), typ, nC: 311
   Package: TO247

 FGY60T120SQDN Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGY60T120SQDN Datasheet (PDF)

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 fgy60t120sqdn.pdf

FGY60T120SQDN FGY60T120SQDN

Ultra Field Stop IGBT,1200 V, 60 AFGY60T120SQDNGeneral DescriptionThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and provideswww.onsemi.comsuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applic

Datasheet: FGHL75T65MQDT , FGP10N60UNDF , FGP15N60UNDF , FGPF15N60UNDF , FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , TGAN40N60F2DS , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , FPF2C110BI07AS2 , FPF2C8P2NL07A , FPF2G120BF07AS , HGT1S7N60A4S9A , ISL9V2040D3S .

 

 
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