FGY60T120SQDN PDF and Equivalents Search

 

FGY60T120SQDN Specs and Replacement

Type Designator: FGY60T120SQDN

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 517 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 84 nS

Coesⓘ - Output Capacitance, typ: 203 pF

Package: TO247

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FGY60T120SQDN datasheet

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FGY60T120SQDN

Ultra Field Stop IGBT, 1200 V, 60 A FGY60T120SQDN General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides www.onsemi.com superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applic... See More ⇒

Specs: FGHL75T65MQDT, FGP10N60UNDF, FGP15N60UNDF, FGPF15N60UNDF, FGPF4565, FGY100T65SCDT, FGY120T65SPD-F085, FGY40T120SMD, IRG4PC50W, FGY75T120SQDN, FGY75T95LQDT, FGY75T95SQDT, FPF2C110BI07AS2, FPF2C8P2NL07A, FPF2G120BF07AS, HGT1S7N60A4S9A, ISL9V2040D3S

Keywords - FGY60T120SQDN transistor spec

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